The present disclosure relates to a method for forming a cavity that traverses a stack of layers including a bottom layer, a first portion of which locally presents an excess thickness, the method comprising a first step of non-selective etching and a second step of selective etching vertically in line with the first portion.

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

In a substrate processing apparatus, a substrate is processed with use of a processing liquid. A first operation component and a second operation component are used in the substrate process. A first operation value of the first operation component and a second operation value of the second operation component are acquired by an operation value acquirer. Whether an abnormality has occurred is determined by an abnormality determiner based on the correlation between the first operation value and the second operation value that are acquired by the operation value acquirer.

A system for monitoring one or more conditions of an automation system of a semiconductor factory includes one or more instrumented substrates, one or more sealable containers and one or more system servers. The one or more instrumented substrates include one or more sensors. The one or more sensors measure one or more conditions of the one or more instrumented substrates as the one or more sealable containers transport the one or more instrumented substrates through the semiconductor factory. The one or more sealable containers also receive sensor data from the one or more sensors included on the one or more instrumented substrates. The one or more system servers are configured to receive the sensor data from the one or more sealable containers. The one or more servers are configured to identify one or more deviations in the measured one or more conditions.

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

A resin molding apparatus including a release film feeder configured to feed a release film is provided. The release film feeder including a feeding roller around which the release film is wound, a gripper configured to grip an end portion of the release film fed from the feeding roller, a support table configured to support the release film fed by a horizontal movement of the gripper in an X direction, the support table configured to horizontally move at least one of in the X direction or in a Y direction perpendicular to the X direction, the X and Y directions defining a surface parallel to a surface of the support table, and a position detecting sensor on the support table and configured to detect position information of the release film may be provided.

An embodiment provides a wafer cassette stoker comprising: a cassette on which a plurality of wafers are loaded; a plurality of chambers disposed in one line while forming at least one layer, wherein the cassette after being cleaned is inserted in each of the chambers and a humidity control unit for supplying a compressed dry air (CDA) into the insides of the chambers so as to control humidity of the cassette.

A method includes processing a substrate in a process chamber according to a recipe, wherein the substrate comprises at least one of a film or a feature after the processing. The method further includes generating a profile map of the first substrate. The method further includes processing data from the profile map using a first model, wherein the first model outputs at least one of an estimated mesa condition of a substrate support for the process chamber, an estimated lift pin location condition of the substrate support an estimated seal band condition of the substrate support, or an estimated process kit ring condition for a process kit ring for the process chamber. The method further includes outputting a notice as a result of the processing.

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

A substrate processing system includes: an acquiring unit configured to acquire process data of each step when each step included in a predetermined process is executed under different control conditions; an extracting unit configured to divide each step into a first section in which the process data fluctuates and a second section in which the process data is converged, and extract first data belonging to the first section and second data belonging to the second section from the process data; and a monitoring unit configured to monitor the process data by comparing one or both of an evaluation value that evaluates the first data and an evaluation value that evaluates the second data with corresponding upper and lower limit values.