Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.

The present disclosure describes a method for detecting unacceptable connection patterns. The method includes, using a processor to perform at least one of: performing an automated place-and-route (APR) process on a circuit layout that includes a first standard cell without a marker layer to generate a circuit graphic database system (GDS) file from the circuit layout, generating a standard-cell GDS file that includes a second standard cell with at least one marker layer applied to the second standard cell, and merging the circuit GDS file with the standard-cell GDS file to generate a merged GDS file that includes the first standard cell with at least one marker layer based on the second standard cell. The method further includes determining whether a connection pattern of the first standard cell in the merged GDS file is an unacceptable connection pattern.

Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.

This invention provides an effective and rapid method of laser processing for separating semiconductor devices formed on hard and solid substrates (6) with a one pass process. The method is based on generating fractures along the scribing trajectory which extend deep into the bulk of a workpiece (6), wherein thermal stress is induced by delivering at least two processing (ultra short pulse) pulsed-beams (7), containing at least primary and secondary pulses. Primary pulses are used to generate a heat accumulated zone, which allows for more efficient absorption of the secondary pulses, which generate a sufficient heat gradient to produce mechanical failures, necessary for mechanically separating the workpiece (6) into separate pieces.

In some embodiments, the present disclosure relates a lithographic substrate marking tool. The lithographic substrate marking tool has a first lithographic exposure tool arranged within a shared housing and configured to generate a first type of electromagnetic radiation during a plurality of exposures. A mobile reticle has a plurality of different reticle fields respectively configured to block a portion of the first type of electromagnetic radiation to expose a substrate identification mark within a photosensitive material overlying a semiconductor substrate. A transversal element is configured to move the mobile reticle so that separate ones of the plurality of reticle fields are exposed onto the photosensitive material during separate ones of the plurality of exposures. The mobile reticle therefore allows for different strings of substrate identification marks to be formed within the photoresistive material using a same reticle, thereby economically providing the benefits of lithographic substrate marking.

The present disclosure relates a method of forming substrate identification marks. In some embodiments, the method may be performed by forming a photosensitive material over a substrate. A first type of electromagnetic radiation is selectively provided to the photosensitive material to expose a plurality of substrate identification marks within the photosensitive material, and a second type of electromagnetic radiation is selectively provided to the photosensitive material to expose one or more alignment marks within the photosensitive material. Exposed portions of the photosensitive material are removed to form a patterned photosensitive material. The substrate is etched according to the patterned photosensitive material to form recesses within the substrate that are defined by the plurality of substrate identification marks and the one or more alignment marks.

A method of focusing includes irradiating an object by directing radiation output by a radiating source through an objective lens, measuring a first intensity of reflected radiation that is reflected from the object, adjusting a distance between the objective lens and the object, measuring a second intensity of reflected radiation, and analyzing the first intensity of reflected radiation and the second intensity of reflected radiation to determine a focal distance between the objective lens and the object. The distance between the objective lens and the object is adjusted to the focal distance and the irradiating intensity is increased to mark the object. In another example, measuring the first intensity of reflected radiation is performed by directing reflected radiation from the object through the objective lens, a beam splitter, a focusing lens, and a pinhole and onto a sensor that outputs a signal indicative of sensed radiation intensity.

A method of manufacturing a semiconductor package includes obtaining a plurality of individual chips classified according to a test bin item as a result of performing an electrical die sorting (EDS) process including testing electrical characteristics of a plurality of chips at a wafer level, packaging the individual chips on corresponding chip mounting regions of a circuit substrate and forming a plurality of individual packages based on position information of the chip mounting regions, each of the individual packages having test bin item information corresponding to the test bin item, classifying the plurality of individual packages according to the test bin item based on the test bin item information, and testing the individual packages classified according to the test bin item.

A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.

A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.