A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

A method for analyzing a semiconductor device includes repeatedly etching an entire surface of a wafer at a same etch rate by a target depth to expose a next surface of the wafer. The method includes obtaining two-dimensional structure information from each repeatedly etched surface of the wafer and serially stacking the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

A semiconductor process analysis device of an embodiment includes a memory and a processor connected to the memory. The processor performs factoring to inspection result groups resulting from inspections of a substrate group, the inspections including an inspection of a fabrication process of a semiconductor integrated circuit. The inspection result groups are first distribution groups resulting from a single inspection of each substrate of the substrate group. Each first distribution represents a distribution of inspection data on a substrate surface. The factoring includes calculating, from the first distribution groups, for each of one or more second distributions, appearance information containing a degree of appearance of one of the one or more second distributions in each substrate. The processor calculates a degree of association between two items of the appearance information, the two items respectively corresponding to different inspection result groups among the inspection result groups.

A flatness measurement unit is a flatness measurement unit to be placed on a shelf for measuring flatness relating to the degree of deviation from a state in which four predetermined points on the shelf are present on the same plane. The flatness measurement unit includes: a body frame; and four contact sections dispersedly disposed on the body frame and provided so as to be in contact with the respective four predetermined points on the shelf. The four contact sections include two first contact sections not located diagonally and two second contact sections other than the first contact sections. The center of gravity of the flatness measurement unit is positioned in an area containing the two first contact sections, among four areas defined by two diagonal lines each passing through the corresponding first contact section and the corresponding second contact section that are located diagonally.

A substrate support includes: a baseplate; a top plate disposed above the baseplate and configured to support a substrate during processing of the substrate; and a bonding layer bonding the top plate to the baseplate. The bonding layer includes: multiple studs separating the top plate from the baseplate; and a bonding material disposed in areas laterally surrounding the studs and located between the top plate and the baseplate.

A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

An electron optical system includes an electromagnetic lens configured to include a yoke, and refract an electron beam passing through the yoke by generating a magnetic field, and a shield coil disposed along the inner wall of the yoke, and configured to reduce a leakage magnetic field generated by the electromagnetic lens.

A method of fabricating an array substrate is provided. The method includes providing a substrate including a gate pad configured to bond a gate driving integrated circuit, a data pad configured to bond a data driving integrated circuit, and a plurality of peripheral layout gate (PLG) proto-lines connecting the gate pad and the data pad; forming a PLG testing pad on the substrate; forming a shorting bar connecting the PLG testing pad to first terminals of the plurality of PLG proto-lines; forming a plurality of testing pins respectively connected to second terminals of the plurality of PLG proto-lines, wherein the plurality of testing pins are formed in a first dummy region of the substrate, the first dummy region is adjacent to an array substrate region of the substrate; and connecting the plurality of testing pins to a probe unit to test connectivity of the plurality of PLG proto-lines.

An apparatus and a method for handling a semiconductor substrate are provided. The apparatus includes a chuck table and a first flexible member. The chuck table includes a carrying surface, a first recess provided within the carrying surface, and a vacuum channel disposed below the carrying surface, and the chuck table is configured to hold the semiconductor substrate. The first flexible member is disposed within the first recess and includes a top surface protruded from the first recess, and the first flexible member is compressed as the semiconductor substrate presses against the first flexible member.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.