Provided is a transport fixing jig that has a high gripping force, hardly contaminates an object to be processed (object to be transported), and is excellent in heat resistance. The transport fixing jig of the present invention includes: a first base material; a carbon nanotube aggregate; and an adhesive layer arranged between the first base material and the carbon nanotube aggregate, wherein the first base material and the carbon nanotube aggregate are bonded to each other via the adhesive layer, and wherein a ratio (adhesive layer/base material) between a linear expansion coefficient of the first base material and a linear expansion coefficient of the adhesive layer is from 0.7 to 1.8.

Systems and methods to improve an industrial heater are disclosed. The heater comprises a horizontal cylinder oriented parallel to the ground and may encase an interior recess running the length of the heater. The heater may be divided into a plurality of sections or zones. One or more mid-rings may support the structure of the heater, and may be disposed at the intersections of adjacent sections or zones. A plurality of interior boards and/or insulation layers may line the interior façade, and may be configured to overlap each other and/or interlock together. The interlocking structure may be absent of any gap or space to prevent heat loss from the interior recess. One or more heat strips may be configured in a sinusoidal pattern. The strips may be mirrored on the opposite side of the interior recess, and may be configured to elongate in the direction opposite of gravity.

A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10.sup.7 to 1×10.sup.8 Ω/sq.

A substrate support includes a top plate portion having a surface on which a substrate is placed; a light irradiation mechanism including light-emitting elements, disposed to face the substrate and heating the substrate using light from the light-emitting elements; a channel-forming member transmitting the light from the light-emitting elements and is bonded to a rear surface of the top plate portion so as to be interposed between the top plate portion and the light irradiation mechanism, and a temperature adjustment part for adjusting a temperature of the channel-forming member by using light having a wavelength absorbed by a light-transmitting material or the channel-forming member. Refrigerant channels are formed between the channel-forming member and the top plate portion, a refrigerant transmitting the light from the light-emitting elements flows through the refrigerant channels, and the top plate portion and the channel-forming member are made of materials having different thermal expansion coefficients.

An ESD protection composite structure includes a link layer, a progressive layer, and a composite layer. The link layer is used for disposing the ESD protection composite structure on a substrate, wherein a material of the link layer includes a metal material. The progressive layer is disposed on the link layer, wherein the material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. The composite layer is disposed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10.sup.7 Ω/sq to 1×10.sup.8 Ω/sq.

A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

There is provided a substrate processing method including: reducing an oxide of a ruthenium film by supplying a hydrogen-containing gas to a substrate including the ruthenium film; etching the ruthenium film by supplying an oxygen-containing gas to the substrate so as to oxidize the ruthenium film; and repeating, multiple times, a cycle including reducing the oxide of the ruthenium film and etching the ruthenium film.

A microLED mass transfer stamping system includes a stamp substrate with an array of trap sites, each configured with a columnar-shaped recess to temporarily secure a keel extended from a bottom surface of a microLED. In the case of surface mount microLEDs, the keel is electrically nonconductive. In the case of vertical microLEDs, the keel is an electrically conductive second electrode. The stamping system also includes a fluidic assembly carrier substrate with an array of wells having a pitch separating adjacent wells that matches the pitch separating the stamp substrate trap sites. A display substrate includes an array of microLED pads with the same pitch as the trap sites. The stamp substrate top surface is pressed against the display substrate, with each trap site interfacing a corresponding microLED site, and the microLEDs are transferred. Fluidic assembly stamp substrates are also presented for use with microLEDs having keels or axial leads.

A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

This specification describes methods for processing semiconductor wafers, methods for loading semiconductor wafers into wafer carriers, and semiconductor wafer carriers. The methods and wafer carriers can be used for increasing the rigidity of wafers, e.g., large and thin wafers, by intentionally bowing the wafers to an extent that does not break the wafers. In some examples, a method for processing semiconductor wafers includes loading each semiconductor wafer into a respective semiconductor wafer slot of a semiconductor wafer carrier, horizontally bowing each semiconductor wafer, and moving the semiconductor wafer carrier into a processing station and processing the semiconductor wafers at the processing station while the semiconductor wafers are loaded into the semiconductor wafer carrier and horizontally bowed.