A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

A system, includes, a semiconductor processing unit, an Automated Materials Handling System (AMHS) vehicle, and a warehouse apparatus, wherein the warehouse apparatus comprises at least one input port, at least one output port, and at least one load/unload port, wherein the warehouse apparatus is configured to perform one of the following: receiving a plurality of tray cassette containers from the AMHS vehicle at the at least one input port, transporting at least one tray cassette in each of a plurality of tray cassette containers to the at least one load/unload port via the at least one input port, transporting at least one first tray from the at least one tray cassette to the semiconductor processing unit via a tray feeder conveyor, and receiving at least one second tray from the semiconductor processing unit via the tray feeder conveyor.

Various embodiments comprise apparatuses for cleaning and drying a substrate and methods of operating the apparatuses. In one embodiment, an exemplary apparatus includes a vertical substrate holder to hold and rotate the substrate at various speeds. An inner shield and an outer shield, when in a closed position, surround the vertical substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. A front-side spray jet and a back-side spray jet are arranged to spray at least one fluid onto both sides of the substrate and edges of the substrate substantially concurrently. A gas flow, combined with a high rotational-speed of the shields and substrate, assist in drying the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.

A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

Various embodiments comprise apparatuses for cleaning and drying a substrate and methods of operating the apparatuses. In one embodiment, an exemplary apparatus includes a vertical substrate holder to hold and rotate the substrate at various speeds. An inner shield and an outer shield, when in a closed position, surround the vertical substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. A front-side spray jet and a back-side spray jet are arranged to spray at least one fluid onto both sides of the substrate and edges of the substrate substantially concurrently. A gas flow, combined with a high rotational-speed of the shields and substrate, assist in drying the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.

An ESD protection composite structure includes a link layer, a progressive layer, and a composite layer. The link layer is used for disposing the ESD protection composite structure on a substrate, wherein a material of the link layer includes a metal material. The progressive layer is disposed on the link layer, wherein the material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. The composite layer is disposed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 110.sup.7 /sq to 110.sup.8 /sq.

The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

A transport container transports semiconductor wafers. The transport container includes: a mandated 3D printed shape, including a device in a base that is suitable for removing liquid media; and at a surface of the transport container, a coating material configured for protection from chemicals capable of etching the wafers. The coating material is applied by of a low-temperature coating process. The coating material consists of polytetrafluoroethylene, perfluoroalkoxy polymer, or polyvinylidene fluoride. The mandated form of the transport container also includes an integrated workpiece holder for the wafers or carriers for the wafers, configured such that that the wafers to be transported are loadable in standing form. The transport container is configured for a designated transport direction of the transport container in an automatic transport system that runs parallel to a front or rear side of the semiconductor wafers.