Patent classifications
H01L21/67742
Substrate transfer mechanism and substrate transferring method
A substrate transfer mechanism for transferring a substrate to each of a plurality of stacked processing modules that process the substrate includes an arm base provided with a first driver, a lift configured to move up and down the arm base, a first arm extending transversely from a lower side of the arm base, and having a tip end that pivots around a vertical axis with respect to the arm base by the first driver, a second arm extending transversely from an upper side of the tip end of the first arm, and having a tip end that pivots around a vertical axis with respect to the first arm along with the pivoting of the first arm, and a substrate holder provided on an upper side of the tip end of the second arm, and configured to rotate around a vertical axis with respect to the second arm.
LINEARLY MOVING MECHANISM AND METHOD OF SUPPRESSING PARTICLE SCATTERING
A linearly moving mechanism includes an internal moving body provided within a case body and configured to be moved in a linear direction, the internal moving body being configured to move an external moving body connected to a connection member protruded from the case body through an opening formed at the case body; a seal belt extending in the linear direction and provided within the case body to close the opening, a first surface side of both end portions of the seal belt in a widthwise direction thereof facing an edge portion of the opening while being spaced apart therefrom; and a deformation suppressing member provided to face a second surface side of the both end portions to suppress deformation of the seal belt, the seal belt being connected to the internal moving body to be moved along with a movement of the internal moving body.
SONAR SENSOR IN PROCESSING CHAMBER
In some embodiments, the present disclosure relates a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a workpiece holder apparatus that is configured to hold a workpiece. A sonar sensor is arranged over the workpiece holder apparatus. The sonar sensor includes an emitter that is configured to produce sound waves traveling towards the workpiece holder apparatus. The sonar sensor also includes a detector that is configured to receive reflected sound waves from the workpiece holder apparatus or an object between the sonar sensor and the workpiece holder apparatus. Further, sonar sensor control circuitry is coupled to the sonar sensor and is configured to determine if a workpiece is present on the workpiece holder apparatus based on a sonar intensity value of the reflected sound waves received by the detector of the sonar sensor.
METAL OXIDE DIRECTIONAL REMOVAL
Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.
SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER SYSTEM
A method includes: receiving a substrate on a first stage by a holder of a substrate transfer mechanism; causing the substrate to pass through a first measurement part, and measuring a first true deviation amount between the holder and the substrate at a first position; causing, when transferring the substrate toward a second stage, the substrate to pass through a second measurement part, and measuring a second true deviation amount between the holder and the substrate at a second position; reflecting a difference between the first and second true deviation amounts to a physical model to correct the physical model; calculating a position correction amount of the holder on the second stage from a thermal displacement amount of the holder at the second position; and controlling the substrate transfer mechanism based on the position correction amount to perform a position correction of the holder.
METHOD OF FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES
A method of forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a semiconductor processing apparatus. This semiconductor processing apparatus comprises a process chamber and a carousel for stationing a wafer boat before or after processing in the process chamber. The method further comprises loading the wafer boat into the process chamber, the wafer boat comprising the plurality of substrates. The method further comprises processing the plurality of substrates in the process chamber, thereby forming, on the plurality of substrates, the epitaxial stack. This epitaxial stack has a pre-determined thickness. The processing comprises unloading the wafer boat, one or more times, from the process chamber to the carousel until the epitaxial stack reaches the pre-determined thickness.
Rotational indexer with additional rotational axes
A rotational indexer rotatable to move semiconductor wafers or other items between various stations arranged in a circular array. The items being moved may be supported by arms of the indexer during such movement. The rotational indexer may be further configured to also cause the items being moved to rotate about other rotational axes to cause rotation of the items relative to the arms supporting them.
Metal etching with in situ plasma ashing
In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.
Radar based position measurement for robot systems
An apparatus including at least one emitter configured to emit energy; at least one receiver configured to receive the emitted energy, where the at least one emitter is mounted on at least one of: a robot arm, an end effector of the robot arm, a substrate on the robot arm, or a substrate process module, where the at least one receiver is mounted on at least one of: the robot arm, the end effector of the robot arm, the substrate on the robot arm, or the substrate process module.
Substrate transfer apparatus and substrate treating apparatus
Disclosed is an apparatus for transferring a substrate. The apparatus includes a transfer robot, a linear rail unit including a movable plate on which the transfer robot is mounted and a running shaft on which the movable plate travels, and a particle diffusion prevention member that prevents diffusion of particles to the outside by maintaining a differential pressure between the movable plate and the running shaft.