Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

A robot for transferring a wafer is disclosed. A blade of the robot includes a first sensor on an upper surface of the blade and the second sensor on a back surface of the blade. The first sensor is operable to align the blade with a wafer. The second sensor is operable to align the blade with a holder that holds the wafer.

A substrate processing apparatus includes a process module including a substrate support unit, an inverting unit and a processing unit, and a transfer module, wherein the inverting unit inverts a substrate so that a second surface faces upward, and provides the inverted substrate to the substrate support unit, wherein the processing unit performs a first processing on the second surface of the substrate seated on the substrate support unit, wherein the inverting unit inverts the first processed substrate so that the first surface faces upward, wherein the transfer module takes the substrate with a first surface facing upward out of the process module, and introduces again the substrate with a first surface facing upward into the process module to seat it on the substrate support unit, wherein the processing unit performs a second processing on the first surface of the substrate seated on the substrate support unit.

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

A system for monitoring alignment of a second component relative to a first component includes a camera, and a controller including a processor and a nontransitory memory. The controller is configured to receive a first captured image from the camera when the second component is in a predetermined position relative to the first component, receive a selection of a region of interest (ROI) in the first captured image, identify a visible feature of the second component within the ROI of the first captured image, receive captured images from the camera during a subsequent operation, identify a second captured image when the second component is expected to be in the predetermined position relative to the first component, and determine if the second component is in the predetermined position relative to the first component based on the second captured image and the identified visible feature of the first captured image.

A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath for liquid treating a plurality of substrates and having an accommodation space for accommodating a treating liquid; and a posture changing member for changing a posture of a substrate which is immersed in the treating liquid from a vertical posture to a horizontal posture.

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

A substrate treating apparatus includes a carrier platform, a transport mechanism, and a controller. The carrier platform places a carrier thereon. The carrier includes a plurality of shelves arranged in an up-down direction. The shelves are each configured to place one substrate thereon in a horizontal posture. The transport mechanism is configured to transport a substrate to a carrier placed on the carrier platform. The controller controls the transport mechanism. The transport mechanism includes a hand and a hand driving unit. The hand supports a substrate. The hand driving unit moves the hand. The controller changes a height position of the hand when the hand is inserted between two of the shelves adjacent to each other in the up-down direction, depending on a shape of a substrate taken from or placed on one of the shelves by the transport mechanism.

Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.