A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

The invention relates to a system for manufacturing a plurality of integrated circuits, IC, mounted on a common support, the system comprising: an input station configured (adapted, arranged) to receive at least one common support; an output station configured (adapted, arranged) to receive at least one common support having a plurality of integrated circuits formed thereon; a plurality of processing modules each module being operable (configured, arranged, adapted) to perform at least one of the processing steps (e.g. deposition, patterning, etching) for forming an integrated circuit on the common support; a transfer means operable (configured, arranged, adapted) to transfer the at least one common support from the input station to the output station and to one or more of the processing modules therebetween; control means (e.g. a control system, or at least one controller, control unit, or control module) operable to direct the at least one common support from the input station to the output station through one or more of the plurality of processing modules according to at least one processing protocol comprising a selected one of a plurality of changeable pre-programmed protocols; the control means being operable to direct the movement of a common support from the input station to the output station and through one or more of the processing modules independently of any other common support. The invention also relates to a method for manufacturing a plurality of integrated circuits, IC, mounted on a common support.

The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

A substrate processing technique includes: a first heating device configured to heat a substrate to a first processing temperature; a first process chamber provided with the first heating device; a second heating device configured to heat the substrate to a second processing temperature utilizing microwaves, the second processing temperature being higher than the first processing temperature; a second process chamber provided with the second heating device; a substrate placement portion configured to load and unload the substrate with respect to the first process chamber and the second process chamber by placing and rotating the substrate; and a controller configured to respectively control the first heating device, the second heating device, and the substrate placement portion.

A technique that improves a quality of substrate processing. A substrate processing apparatus includes: a plurality of processing chambers and transfer chambers; a vacuum transfer chamber; a plurality of gate valves; a plurality of first gas supply units to supply an inert gas to a substrate; a transfer robot; and a control unit to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is a second distance greater than the first distance when the substrate passes through the plurality of gate valves.

An exposure machine includes a base portion, a port portion, and a conveying structure. The base portion includes a work table and a bearing frame. The bearing frame is disposed on the work table and is configured to carry a tray. The port portion is configured to serve as a feed port and a discharge port of the exposure machine. The conveying structure includes at least one upper arm, at least one lower arm, and a movable tray guide. The movable tray guide is connected to the base portion and the port portion. The at least one lower arm is provided with a hook configured to hook the tray and move the tray to the port portion.

Electronic device manufacturing apparatus and robot apparatus are described. The apparatus are configured to efficiently pick and place substrates wherein the robot apparatus includes an upper arm and three blades B1, B2, B3 that are independently rotatable. The three blades are configured to service a first dual load lock and second dual load lock wherein each dual load lock includes a different pitch. In some embodiments, a first pitch P1 is smaller than a second pitch P2. Blades B2 and B3 (or optionally blades B1 and B2) can service the first dual load lock with Pitch P1 and blades B1 and B3 can service the second dual load lock including the second pitch P2. Methods of operating the electronic device manufacturing apparatus and the robot apparatus are provided, as are numerous other aspects.

Disclosed is a substrate treating apparatus that performs a cleaning treatment on substrates. A treating block includes a plurality of treating units in an upper and lower stages, respectively. The treating block includes a front face cleaning unit and a back face cleaning unit, each being at least one in number, in the upper stage. The treating block includes at least one tower unit including the front face cleaning unit and the back face cleaning unit, each being at least one in number, in the lower stage. Moreover, a transportation block is provided that includes a center robot in each of the upper and lower stages.

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.