A semiconductor manufacturing apparatus, including a chip supply module used for providing a plurality of chips; a load plate supply module including a load plate and a load-plate motion platform used for holding the load plate; a chip transfer-loading module including a chip transfer-loading platform used for suctioning chips. The chip transfer-loading platform is used at a first position for transferring chips from the chip supply module. The chip transfer-loading platform carries the chips to a second position to bond the chips onto a load plate to form a bonding sheet. A packaging module is used for packaging the bonding plate on the load-plate motion platform to form a packaged chip.

Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

Embodiments of the present disclosure provide a plasma processing system, comprising: a transfer chamber, the transfer chamber including a plurality of sidewalls, each sidewall being connected with a plurality of process chambers; each process chamber including a base therein, the base including a central point; wherein at least two process chambers connected to a same sidewall form one process chamber group, wherein a first distance is provided between the central points of two bases in a first process chamber group, and a second distance is provided between the central points of two bases in a second process chamber group, the first distance being greater than the second distance; and the transfer chamber comprises a mechanical transfer device; a rotating pedestal includes two independently movable robot arms thereon, the two robot arms; and the two robot arms both include a plurality of rotating shafts and a plurality of rotating arms, wherein a remote rotating arm of each robot arm further includes an end effector for holding a substrate. The mechanical transfer device according to the present disclosure may simultaneously retrieve and place the substrate in the process chamber group with the first distance and the substrate in the process chamber group with the second distance.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.

Apparatus and methods for automatically handling die carriers are disclosed. In one example, a disclosed apparatus includes: at least one load port each configured for loading a die carrier operable to hold a plurality of dies; and an interface tool coupled to the at least one load port and a semiconductor processing unit. The interface tool comprises: a first robotic arm configured for transporting the die carrier from the at least one load port to the interface tool, and a second robotic arm configured for transporting the die carrier from the interface tool to the semiconductor processing unit for processing at least one die in the die carrier.

The present disclosure provides an apparatus and a method for transferring a wafer, and an apparatus for controlling transferring a wafer. The apparatus for transferring a wafer includes a transfer chamber, at least one process chamber, a first detection unit, and a control unit, wherein the transfer chamber is provided therein with a transfer unit; the at least one process chamber is in connect with the transfer chamber, and a chamber door is provided at a connect position; the first detection unit includes a first transmit end and a first receive end, the first transmit end is provided on one of the transfer unit and the chamber door, and the first transmit end is provided on the other one of the transfer unit and the chamber door.

A transfer apparatus including a frame, multiple arms connected to the frame, each arm having an end effector and an independent drive axis for extension and retraction of the respective arm with respect to other ones of the multiple arms, a linear rail defining a degree of freedom for the independent drive axis for extension and retraction of at least one arm, and a common drive axis shared by each arm and configured to pivot the multiple arms about a common pivot axis, wherein at least one of the multiple arms having another drive axis defining an independent degree of freedom with respect to other ones of the multiple arms.

A device for processing at least one semiconductor substrate. The device includes: a reactor with a wall which encloses a reaction chamber; a closing structure for loading the reaction chamber with at least one semiconductor substrate and for unloading the at least one semiconductor substrate from the reaction chamber and for hydrofluoric acid-tight closure of the reaction chamber; and a heating device designed to establish at least one specified temperature in at least one temperature range in the reaction chamber. The device further includes: a gas inlet designed to supply hydrofluoric acid in vapor form to the reaction chamber, and a gas outlet designed to remove hydrofluoric acid in vapor form from the reaction chamber; and a gas supply system which is coupled to the gas inlet and is designed to supply hydrofluoric acid in vapor form to the gas inlet at the specified temperature.

An aligner device includes a robot hand, a lifting mechanism, sensors, a misalignment calculating unit, an x-y misalignment correcting unit, and a θ misalignment correcting unit. The robot hand includes vertically aligned hand members each configured to hold a planar workpiece. The lifting mechanism moves planar workpieces transported by the robot hand up from and down to the hand members, respectively. Each of the sensors, vertically spaced apart from each other, has a downward sensor surface to capture the outline of a planar workpiece brought close to the sensor surface by the workpiece lifting mechanism. The misalignment calculating unit calculates, by using the images of the captured outline shapes of the planar workpieces, an amount of positional misalignment of each planar workpiece with a reference position in X, Y and θ directions. The X-Y misalignment correcting unit corrects the misalignment of each planar workpiece in the X and Y directions based on the amount of X-Y direction misalignment calculated by the misalignment calculating unit. The θ misalignment correcting unit corrects the misalignment of each planar workpiece in the θ direction based on the amount of θ misalignment of the planar workpiece.