A method of batch transferring micro components comprising steps of: A. arranging multiple probes in array on a carrying unit and extending multiple columns of the multiple probes out of a bottom of the carrying unit; B. providing a temperature control conduit in the carrying unit into which hot water is fed; C. driving the carrying unit so that the multiple columns of the multiple probes dip an adhesive material; D. feeding cold water into the temperature control conduit; E. moving the carrying unit on micro components and pressing the multiple probes of the carrying unit downward; F. moving the carrying unit onto a substrate and pressing the micro components to desired positions respectively; and G. heating adhesive material again as pressing the micro components and controlling the substrate at a low temperature so that the adhesive material freezes among the micro components and the substrate.

A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.

A substrate processing apparatus includes a processing section that performs a batch process to a plurality of substrates. A first substrate transport mechanism removes one of substrates contained in a substrate container placed on a stage, and transport the substrate to a position adjusting unit, in which the position of the substrate in the rotating direction of the substrate is adjusted, and transports the substrate back to the substrate container. Then a second substrate transport mechanism collectively removes from the substrate container the substrates whose positions in the rotating direction have been adjusted by the position adjusting unit.

Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

A film-forming device that includes a cylindrical chamber capable of maintaining vacuum therein, a workpiece holder that is constructed to align and hold workpieces to be processed in multiple stages such that main surfaces of the workpieces are oriented in a vertical direction relative to a central axis of the chamber, a deposition material supply pipe, a modifier supply pipe, a carrier gas supply pipe, and an exhaust mechanism, wherein in a cross section of the chamber in a direction parallel to the main surfaces of the workpieces, the exhaust mechanism is located on a side opposite to an opening direction of gas outlets of the deposition, modifier, and carrier gas supply pipes, and a total gas flow from the deposition, modifier, and carrier gas supply pipes is symmetric about a centerline of the chamber.

A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. Outer sides of the first wafer transport module are coupled to first and second process modules, respectively, and outer sides of the second wafer transport module are coupled to third and fourth process modules, respectively. The first wafer transport module, the second wafer transport module, and the buffer module define a continuous wafer transport volume providing a controlled environment within the wafer transport assembly.

Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

There is provided a technique that includes: a substrate transfer chamber; a pod transfer chamber; a plurality of reinforcement structures installed along a wall of a housing constituting the substrate transfer chamber and forming a plurality of first confinement spaces between the reinforcement structures and the wall; a communication hole installed at each of the plurality of reinforcement structures so that a space in the housing and each of the plurality of first confinement spaces communicate with each other; a collecting pipe having the plurality of reinforcement structures connected in the housing and including a second confinement space communicating with the plurality of first confinement spaces; and a pressure regulator connected to the collecting pipe, and configured to perform a regulation so that a relationship of pressure is satisfied.

Examples of a substrate processing apparatus includes a susceptor, a plurality of three or more susceptor pins configured to protrude from an upper surface of the susceptor or be positioned below the upper surface of the susceptor, a transfer arm configured to provide a substrate onto the susceptor or take out a substrate on the susceptor, a plurality of sensors configured to individually detect contact or non-contact of a substrate with the plurality of susceptor pins individually, and a control device configured to monitor a detection result of the plurality of sensors and determine abnormality when an order of variations in a contact state of the substrate with the plurality of susceptor pins is not a predetermined order or when a time difference between the variations in the contact state of the substrate with the plurality of susceptor pins is not within a predetermined time difference range.