Apparatus and methods for automatically handling die carriers are disclosed. In one example, a disclosed apparatus includes: at least one load port each configured for loading a die carrier operable to hold a plurality of dies; and an interface tool coupled to the at least one load port and a semiconductor processing unit. The interface tool comprises: a first robotic arm configured for transporting the die carrier from the at least one load port to the interface tool, and a second robotic arm configured for transporting the die carrier from the interface tool to the semiconductor processing unit for processing at least one die in the die carrier.

The present disclosure relates to a substrate transfer apparatus for transferring a substrate to a substrate processing apparatus in a reduced pressure atmosphere. The apparatus comprises a substrate holder to hold the substrate; and a substrate measurer, provided on the substrate holder, to measure a position of the substrate with respect to the substrate holder.

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

Methods, systems, and devices including a robot apparatus with at least one lower arm configured to rotate about a first rotational axis and at least one upper arm rotatably coupled to the at least one lower arm at a second rotational axis that is spaced away from the first rotational axis. The robot apparatus further include a first end effector coupled to the upper arm. The robot apparatus further includes a second end effector coupled to the at least one upper arm. The robot apparatus is suitable for accommodating varying pitches between two adjacent processing chambers or between two adjacent load lock chambers. The robot apparatus may operate in dual substrate handling mode, single substrate handling mode, or a combination thereof. The robot apparatus may also be an off-axis robot.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

A substrate processing system includes a substrate loading unit which loads a plurality of substrates, a substrate transfer unit which transfers N (where N is natural number) substrates at the same time from the substrate loading unit, and a substrate processing unit including a plurality of process chambers which receives the N substrates at the same time from the substrate transfer unit and processes the received substrates where each of the process chambers includes a stage on which the N substrates are disposed and an insulation layer disposed between the N substrates.

The present invention relates to a device and a method for the treatment of wafers. Proposed is a transport of the wafers in vertical alignment through the process solution which is used for the treatment of the wafers, whereby an increase of the throughput, a simplified aftertreatment of the exhaust air as well as a reduction of the consumption of components of the process solution are made possible. The invention can, inter alia, be used in the production of solar cells or also of printed boards, for example printed boards for the electrical industry.

The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.

Disclosed is a substrate treating system and a substrate transporting method. A substrate transport mechanism of an indexer block can take a substrate W into and out of a carrier placed on a platform. Moreover, the substrate transport mechanism transports the substrate W between two treatment layers at different height positions in a first treating block and a second treating block. Accordingly, any delivery block configured to move substrates between two treatment layers in an up-down direction is not necessarily provided between the indexer block and the treating block as in the prior art. This achieves suppression of a footprint of the substrate treating system.