Patent classifications
H01L21/67754
Transfer robot and substrate processing apparatus having the same
The present invention disclosed herein relates to a transfer robot and a substrate processing apparatus having the same, and more particularly, to a transfer robot for transferring a substrate through a transfer module and a substrate processing apparatus having the same. The substrate processing system according to the present invention includes: a transfer module (300) provided with a transfer robot (500) configured to transfer substrates (10); one or more dual process modules (100) each of which is installed at one side of the transfer module (300) so that two substrates (10) are accessible at the same time and on which a pair of substrate support units (13) configured to respectively seat the two substrates (10) thereon are disposed horizontally; and one or more single process modules (200) each of which is installed at one side of the transfer module (300) so that one substrate (10) is accessible and on which one or more substrate support units (13) configured to seat the substrates (10) thereon are provided. The transfer robot (500) includes a first substrate seating unit (510a) and a second substrate seating unit (510b), each of which has a seating surface (11), on which the substrate (10) is seated, and which are disposed on the same first plane, and at least one of the first substrate seating unit (510a) or the second substrate seating unit (510b) is installed to be rotatable about a vertical rotation axis (C1) so as to be disposed in a region in which the at least one of the first substrate seating unit (510a) or the second substrate seating unit (510b) does not interfere with the substrate transfer when the substrates (10) are transferred.
Wafer transport assembly with integrated buffers
A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.
Automatic wafer centering method and apparatus
A substrate transport apparatus including a transport chamber, a drive section, a robot arm having an end effector at a distal end configured to support a substrate and being connected to the drive section generating at least arm motion in a radial direction extending and retracting the arm, an imaging system with a camera mounted in a predetermined location to image at least part of the robot arm, and a controller connected to the imaging system to image the arm moving to a predetermined repeatable position, the controller effecting capture of a first image of the robot arm proximate to the repeatable position decoupled from encoder data of the drive axis, wherein the controller calculates a positional variance of the robot arm from comparison of the first image with a calibration image, and from the positional variance determines a motion compensation factor changing the extended position of the robot arm.
Power device structures and methods of making
Exemplary semiconductor processing methods may include forming a p-type silicon-containing material on a substrate including a first n-type silicon-containing material defining one or more features. The p-type silicon-containing material may extend along at least a portion of the one or more features defined in the first n-type silicon-containing material. The methods may include removing a portion of the p-type silicon-containing material. The portion of the p-type silicon-containing material may be removed from a bottom of the one or more features. The methods may include providing a silicon-containing material. The methods may include depositing a second n-type silicon-containing material on the substrate. The second n-type silicon-containing material may fill the one or more features formed in the first n-type silicon-containing material and may separate regions of remaining p-type silicon-containing material.
COUPLED PROCESSING CONTAINERS, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD
Coupled processing containers include a first processing container and a second processing container provided side by side in a horizontal direction to form a gap therebetween, the first processing container and the second processing container being configured to store substrates, respectively, in order to perform vacuum processing, and a connecting part provided across the gap so as to connect the first processing container and the second processing container to each other, the connecting part being configured to be slidable in the horizontal direction with respect to at least one of the first processing container and the second processing container.
Film deposition using enhanced diffusion process
Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.
HIGH PRESSURE AND HIGH TEMPERATURE ANNEAL CHAMBER
Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSPORT METHOD
A substrate processing apparatus includes a load port, a load lock chamber, a processing module, a substrate transport mechanism, and a controller. The substrate transport mechanism includes a plurality of substrate holders, each of which is configured hold one substrate. The controller is configured to control, when the processing module is configured to process one substrate at a time, the substrate transport mechanism such that a first substrate holder transports the substrate between the load port and the processing module and a second substrate holder transports the substrate between the load lock chamber and the processing module. The controller is further configured to control, when the processing module is configured to simultaneously process the plurality of substrates, the substrate transport mechanism such that the plurality of substrate holders simultaneously transport the plurality of substrates between the load port, the load lock chamber, and the processing module.
VACUUM PROCESSING APPARATUS AND METHOD OF CONTROLLING VACUUM PROCESSING APPARATUS
The present disclosure reduces deviation in the position and inclination of a stage due to the deformation of a processing container. A vacuum processing apparatus includes a processing container configured to be capable of maintaining an inside thereof in a vacuum atmosphere, a stage provided in the processing container such that a substrate is placed thereon, a support member passing through a hole in the bottom of the processing container to support the stage from the bottom side, a base member engaged with an end portion of the support member located outside the processing container to be movable integrally with the stage, and a plurality of actuators provided in parallel with each other between the bottom of the processing container and the base member and configured to adjust a position and an inclination of the stage by moving the base member relative to the bottom of the processing container.
ROBOT APPARATUS, SYSTEMS, AND METHODS FOR TRANSPORTING SUBSTRATES IN ELECTRONIC DEVICE MANUFACTURING
Electronic device manufacturing systems, robot apparatus and associated methods are described. The robot apparatus includes an arm having an inboard end and an outboard end, the inboard end is configured to rotate about a shoulder axis; a first forearm is configured for independent rotation relative to the arm about an elbow axis at the outboard end of the arm; a first wrist member is configured for independent rotation relative the first forearm about a first wrist axis at a distal end of the first forearm opposite the elbow axis, wherein the first wrist member includes a first end effector and a second end effector. The robot apparatus further includes a second forearm configured for independent rotation relative to the arm about the elbow axis; a second wrist member configured for independent rotation relative the second forearm about a second wrist axis, wherein the second wrist member comprises a third end effector and a fourth end effector. The robot apparatus further includes a third forearm configured for independent rotation relative to the arm about the elbow axis; and a third wrist member configured for independent rotation relative the third forearm about a third wrist axis, wherein the second wrist member includes a fifth end effector and a sixth end effector.