H01L21/67757

SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the single-substrate-type processing part.

SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

Semiconductor processing device

A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD

A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate configured to load a boat into the reaction tube and positioned under the reaction tube to seal the reaction tube, the boat supporting a plurality of wafers thereon, a gas injector extending in the vertical direction along the boat within the reaction tube and including a plurality of ejection holes formed therein, a rotary mechanism configured to rotate the gas injector about its center axis to adjust an angle of the ejection hole toward the wafer, and a lift mechanism configured to move the gas injector upward and downward to adjust a height of the ejection hole on the wafer.

SYSTEM AND METHOD FOR WAFER PROCESSING
20210143042 · 2021-05-13 ·

A method for preventing a collision in a wafer processing system is provided. The method includes aligning a first sensor and a second sensor. The first sensor is disposed on a predetermined position of an elevating member connected to a bottom of a vertical wafer boat of the wafer processing system, and the second sensor is disposed on a shutter of a chamber of the wafer processing system. The method further includes activating the first sensor and the second sensor to monitor a path alongside the vertical wafer boat when the chamber is closed by the shutter.

Substrate liquid processing apparatus and substrate liquid processing method
10916456 · 2021-02-09 · ·

A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid.

DEVICE FOR SELF-ASSEMBLING SEMICONDUCTOR LIGHT-EMITTING DIODES

Discussed is a device for self-assembling semiconductor light-emitting diodes, in which the device includes an assembly chamber having a space for accommodating a fluid; a magnetic field forming part having at least one magnet for applying a magnetic force to the semiconductor light-emitting diodes dispersed in the fluid and a moving part for changing positions of the at least one magnet so that the semiconductor light-emitting diodes move in the fluid; a substrate chuck having a substrate support part configured to support a substrate, and a vertical moving part for lowering the substrate so that one surface of the substrate is in contact with the fluid in a state in which the substrate is supported by the substrate support part; and a controller for controlling a movement of the magnetic field forming part and the substrate chuck, wherein the controller controls a depth at which the substrate is submerged in the fluid based on a degree of warping of the substrate.

APPARATUS AND METHOD TO PROCESS WAFERS
20210050231 · 2021-02-18 ·

The disclosure relates to an apparatus for processing wafers with a process chamber to process wafers held in a wafer boat; a cassette handler chamber to handle wafer cassettes; and, a wafer handler chamber provided with a wafer handler to transfer wafers from wafer cassettes to the wafer boat. The wafer handler is constructed and arranged to transfer wafers between a wafer storage, the wafer boat and wafer cassettes.

SUBSTRATE PROCESSING DEVICE

A substrate processing device according to the present embodiment includes a processing tank configured to be capable of accumulating a liquid. A conveyer can array a plurality of semiconductor substrates in such a manner that front surfaces of the semiconductor substrates face a substantially horizontal direction, and transport the semiconductor substrates into the processing tank. A plurality of liquid suppliers can supply the liquid toward an inside of the processing tank from a lower portion of the processing tank. A plurality of current plates are arranged on at least either one end side or the other end side of an array of the semiconductor substrates. The current plates are provided in a first gap region above the semiconductor substrates in gaps between the conveyer and a sidewall of the processing tank on both sides of the conveyer as viewed from an array direction of the semiconductor substrates.

SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Described herein is a technique capable of reducing a thermal damage to a furnace opening structure when processing a substrate at a high temperature. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube provided with a furnace opening; heaters provided respectively in a plurality of zones arranged along a tube axis direction; temperature sensors respectively corresponding to the zones; a temperature controller configured to control electric power based on temperature data obtained by the temperature sensors, wherein the temperature controller is configured to, when the substrates are subject to a heat treatment process by the heaters, control the electric power supplied to the heaters such that temperatures of upper heaters about as high as the substrates reach predetermined temperatures, and that a temperature gradient is formed in lower zones lower than the substrates such that a temperature decreases toward the furnace opening.