A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a first treating part performing, a liquid treatment on a plurality of substrates in a batch-type treating, method and a second treating part treating the substrates which have been treated at the first treating part, and performing, the liquid treatment or a drying treatment on a single substrate a single-type treating method.

There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

The present disclosure provides a method and a cleaning apparatus for cleaning semiconductor wafers. The cleaning apparatus includes a plurality of cleaning tanks, a dipping tank, a first robot hand, a second robot hand, and at least one drying chamber. The plurality of cleaning tanks is configured to clean a plurality of wafers held by a cassette by cleaning agents. The plurality of wafers is cleaned in the plurality of cleaning tanks through a batch process. The dipping tank is configured to rinse the plurality of wafers by a replacement agent. The at least one drying chamber is configured to dry the wafer taken by the second robot hand with single wafer process.

A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.

A substrate processing apparatus includes a process chamber in which one or more substrates are processed; and a substrate support configured to support the one or more substrates in the process chamber. The substrate support includes one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates, and a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion.

A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.