Provided are an apparatus and a method which ensure the wafers immersing in the chemical solution from one cleaning tank to the other cleaning tanks. The apparatus includes an inner tank (1001); at least one divider (1002) for dividing the inner tank (1001) into at least two cleaning tanks filled with chemical solution; a first robot (1005) equipped with at least a pair of end effectors (1051) for gripping and taking a wafer from a first cleaning tank (1011) to a second cleaning tank (1012); wherein each cleaning tank is provided with a cassette bracket (1003) in the bottom for holding wafers, and the at least one divider (1002) is provided with at least one slot (1004)< wherein the first robot (1005) grips and takes the wafer from the first cleaning tank (1011) to the second cleaning tank (1012) through the slot (1004) while keeping the wafer immersing.

A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed; a single-wafer processing section in which the substrates of the wafer lot is processed one by one; and an interface section that delivers the substrates between the batch processing section and the single-wafer processing section. The batch processing section includes: a processing bath in which the wafer lot is immersed and processed; and a first transfer device that transfers the wafer lot to the processing bath. The interface section includes: an immersion bath disposed outside a movement range of the first transfer device and that immerses the wafer lot; and a second transfer device that holds and transfers the wafer lot between the first transfer device and the immersion bath.

A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

A substrate processing module includes a first tank and a second tank that are arranged in a first direction and in which a substrate can be arranged, a first conveyance unit that moves the substrate in the first direction, and a second conveyance unit that moves the substrate in a second direction intersecting the first direction.

Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.

A deposition or cleaning apparatus including an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber

A wafer bonding apparatus is provided includes a lower support plate configured to structurally support a first wafer on an upper surface of the lower support plate; a lower structure adjacent to the lower support plate and movable in a vertical direction that is perpendicular to the upper surface of the lower support plate, an upper support plate configured to structurally support a second wafer on a lower surface of the lower support plate, and an upper structure adjacent to the upper support plate and movable in the vertical direction.

A substrate processing apparatus includes a substrate holding section that holds a plurality of substrates, which form a substrate row, aligned in a row in a row direction, a processing tank that stores a processing liquid allowing the substrates held by the substrate holding section to be immersed in, and a plurality of bubble generating pipes that each supply a gas to the processing liquid to generate bubbles in the processing liquid. Of the plurality of bubble generating pipes, a flow rate of a gas supplied to an end bubble generating pipe located below an end of the substrate row immersed in the processing liquid differs from a flow rate of a gas supplied to a central bubble generating pipe located below a center of the substrate row.

A substrate processing apparatus includes a substrate holding section that holds a substrate, a processing tank that stores a processing liquid allowing the substrate held by the substrate holding section to be immersed in, and a plurality of bubble generating pipes that each supply a gas to the processing liquid to generate bubbles in the processing liquid. Of the plurality of bubble generating pipes, a flow rate of a gas supplied to an outer bubble generating pipe located below an outer region of the substrate immersed in the processing liquid differs from a flow rate of a gas supplied to an inner bubble generating pipe located below a central region of the substrate.

A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. The gas supply unit and the exhaust unit are provided on one side of the processing container.