A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×10.sup.19/cm.sup.3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.

Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

The purpose of the present invention is to accurately deal with a variety of processing conditions and variations thereof, and to improve total throughput by efficiently operating a conveyance arm device in accordance with the processing conditions, even during cleaning. When a first wafer is loaded on a load-lock chamber, a conveyance-sequence category for operating each of a number of steps for a conveyance arm device capable of operating during cleaning is selected in accordance with processing conditions of the wafer, and a plurality of operation patterns are selected, combined and scheduled. The conveyance arm device is controlled in accordance with the scheduled conveyance sequence to control substrate conveyance.

A process that anneals a surface of a substrate bearing a coating includes running the substrate under a flash lamp emitting intense pulsed light and irradiating the coating with the pulsed light through a mask located between the flash lamp and the coating. A frequency of the flash lamp and a run speed of the substrate are adjusted so that each point of the coating to be annealed receives at least one light pulse. A distance between a lower face of the mask and the surface of the coating to be annealed is at most equal to 1 mm. A shape and extent of a slit in the mask are such that the mask occults the coating to be annealed in all zones where the light intensity that, in an absence of the mask, would arrive at the coating to be annealed is lower than a threshold light intensity.

A method for treating the underside of a planar substrate with a treatment medium includes hydrophobizing the underside of the substrate, subsequently forming a protective liquid film on a top side of the substrate and then bringing the treatment medium into contact with the underside of the substrate. In the process, the protective liquid film protects the upper side of the substrate from any action or effect of the treatment medium and/or outgassing. A device for carrying out the method is also provided.

An organic layer deposition apparatus, and a method of manufacturing an organic light-emitting display device using the organic layer deposition apparatus. The organic layer deposition apparatus includes: an electrostatic chuck that fixedly supports a substrate that is a deposition target; a deposition unit including a chamber maintained at a vacuum and an organic layer deposition assembly for depositing an organic layer on the substrate fixedly supported by the electrostatic chuck; and a first conveyor unit for moving the electrostatic chuck fixedly supporting the substrate into the deposition unit, wherein the first conveyor unit passes through inside the chamber, and the first conveyor unit includes a guide unit having a receiving member for supporting the electrostatic chuck to be movable in a direction.

Reduction of solar wafer LID by exposure to continuous or intermittent High-Intensity full-spectrum Light Radiation, HILR, by an Enhanced Light Source, ELS, producing 3-10 Sols, optionally in the presence of forming gas or/and heating to within the range of from 100° C.-300° C. HILR is provided by ELS modules for stand-alone bulk/continuous processing, or integrated in wafer processing lines in a High-Intensity Light Zone, HILZ, downstream of a wafer firing furnace. A finger drive wafer transport provides continuous shadowless processing speeds of 200-400 inches/minute in the integrated furnace/HILZ. Wafer dwell time in the peak-firing zone is 1-2 seconds. Wafers are immediately cooled from peak firing temperature of 850° C.-1050° C. in a quench zone ahead of the HILZ-ELS modules. Dwell in the HILZ is from about 10 sec to 5 minutes, preferably 10-180 seconds. Intermittent HILR exposure is produced by electronic control, a mask, rotating slotted plate or moving belt.

A stripping device and a display substrate production line are provided. The stripping device comprises a stripping chamber. A stripping liquid with a set temperature is provided within the stripping chamber; the stripping device further comprising a liquid jet component, the liquid jet component includes a liquid supplying pipeline and a liquid jet head, the liquid supplying pipeline is configured to supply a cleaning liquid to the liquid jet head, the liquid jet head is configured to output the cleaning liquid, the liquid supplying pipeline is arranged in the stripping chamber, and the stripping liquid enables the cleaning liquid in the liquid supplying pipeline to reach the set temperature. The stripping device enables the cleaning liquid to reach the set temperature, such that the stripping liquid and the photoresist remaining on the display substrate are effectively removed, the stripping liquid is prevented from being separated out on the display substrate and is further prevented from being crystallized to block an output port of the liquid jet head; and the stripping device further effectively uses the thermal energy in the stripping chamber to save energy consumption.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

The present disclosure discloses a film-forming device belongs to the field of film forming technology comprising: a film-forming chamber configured to form a film on a substrate disposed inside the film-forming chamber; a transfer assembly configured to transport a shielding plate into the film-forming chamber along a conveying path, move the shielding plate to a first position, and remove the shielding plate from the film-forming chamber along the conveying path; and a cleaning assembly disposed at the conveying path outside the film-forming chamber for cleaning the shielding plate removed from the film-forming chamber.