A dielectric substrate has a first surface including a first terminal connector and a second terminal connector located along a first side surface. A recess is between the first terminal connector and the second terminal connector. The recess has a first inner surface continuous with the first terminal connector, a second inner surface continuous with the second terminal connector, and a bottom surface between the first inner surface and the second inner surface. The first terminal connector has first wettability with a bond on its surface, and a first region has second wettability with the bond on its surface lower than the first wettability.

A described example includes: a ceramic package having a board side surface and an opposite top side surface; a heat slug mounted to the board side surface of the ceramic package, forming a bottom surface in a die cavity; leads mounted to conductive lands on the ceramic package; sidewall metallization extending from the conductive lands and covering a portion of one of the sides of the ceramic package; copper tungsten alloy conductor layers formed in the ceramic package and spaced by dielectric layers; bond fingers formed of a conductor layer and extending to the die cavity; a semiconductor device mounted over the heat slug, and having bond pads on a device side surface facing away from a surface of the heat slug; electrical connections between bond pads on the semiconductor device and the bond fingers; and a lid mounted to the top side surface of the ceramic package.

A described example includes: a ceramic package having a board side surface and an opposite top side surface; a heat slug mounted to the board side surface of the ceramic package, forming a bottom surface in a die cavity; leads mounted to conductive lands on the ceramic package; sidewall metallization extending from the conductive lands and covering a portion of one of the sides of the ceramic package; copper tungsten alloy conductor layers formed in the ceramic package and spaced by dielectric layers; bond fingers formed of a conductor layer and extending to the die cavity; a semiconductor device mounted over the heat slug, and having bond pads on a device side surface facing away from a surface of the heat slug; electrical connections between bond pads on the semiconductor device and the bond fingers; and a lid mounted to the top side surface of the ceramic package.

Example embodiments relate to an electronic package, to an electronic device comprising such a package, and to a lead frame for manufacturing the electronic package. Some examples may particularly relate to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the example embodiments, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

An insulating component includes an insulating substrate, a metal layer, a bond, and a lead terminal. The plate-like insulating substrate has a groove continuous from its upper to side surfaces. The metal layer includes a first metal layer on the upper surface of the insulating substrate and a second metal layer on an inner surface of the groove continuous with the first metal layer. The bond is on an upper surface of the metal layer. The lead terminal is on an upper surface of the first metal layer with the bond in between, and overlaps the groove. The bond includes a first bond fixing the lead terminal to the first metal layer and a second bond on an upper surface of the second metal layer continuous with the first bond. The groove includes an inner wall having a ridge. The second bond is between the ridge and the lead terminal.

An insulating component includes an insulating substrate, a metal layer, a bond, and a lead terminal. The plate-like insulating substrate has a groove continuous from its upper to side surfaces. The metal layer includes a first metal layer on the upper surface of the insulating substrate and a second metal layer on an inner surface of the groove continuous with the first metal layer. The bond is on an upper surface of the metal layer. The lead terminal is on an upper surface of the first metal layer with the bond in between, and overlaps the groove. The bond includes a first bond fixing the lead terminal to the first metal layer and a second bond on an upper surface of the second metal layer continuous with the first bond. The groove includes an inner wall having a ridge. The second bond is between the ridge and the lead terminal.