A Faraday cage cavity package, having: a leadframe; a plastic body molded onto the leadframe to form a cavity exposing top surfaces of a die attach paddle, tie bars and lead fingers of the leadframe within the cavity; and a lid attached onto the top of the leadframe to protect a die attached to the die attach pad from electromagnetic fields, wherein the Faraday cage cavity package is manufactured in a matrix format and then separated into a plurality of individual Faraday cage cavity package units.

A method of forming a high electron mobility transistor (HEMT) includes: providing a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate; forming a first insulating layer on the barrier layer; and forming a gate contact, a source contact, and a drain contact on the barrier layer. An interface between the first insulating layer and the barrier layer comprises a modified interface region on a drain access region and/or a source access region of the semiconductor structure such that a sheet resistance of the drain access region and/or the source access region is between 300 and 400 Ω/sq.

An electronic device having a unitary housing is disclosed. The device can include a first housing component having an open cavity, an internal electronic part disposed within the cavity, a second housing component disposed across the cavity, and a support feature disposed within the cavity and arranged to support the second housing component. The first housing component can be formed from metal, while the second housing component can be formed from a plurality of laminated foil metal layers. The second housing component can be attached to the first housing component via one or more ultrasonic welds, such that a fully enclosed housing is created. The fully enclosed housing can be hermetically sealed, and the outside surfaces thereof can be machined or otherwise finished after the ultrasonic welding.

An electronic device having a unitary housing is disclosed. The device can include a first housing component having an open cavity, an internal electronic part disposed within the cavity, a second housing component disposed across the cavity, and a support feature disposed within the cavity and arranged to support the second housing component. The first housing component can be formed from metal, while the second housing component can be formed from a plurality of laminated foil metal layers. The second housing component can be attached to the first housing component via one or more ultrasonic welds, such that a fully enclosed housing is created. The fully enclosed housing can be hermetically sealed, and the outside surfaces thereof can be machined or otherwise finished after the ultrasonic welding.

A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

A device includes a sensor die, an electrical coupling, a substrate, a liquid detection unit, and a housing unit. The sensor die is coupled to the substrate via the electrical coupling. The liquid detection unit electrically is coupled to the sensor die. The housing unit and the substrate are configured to house the sensor die, the liquid detection unit, and the electrical coupling. The housing unit comprises an opening that exposes the sensor die to an environment external to the housing unit. The liquid detection unit detects presence of liquid within an interior environment of the housing unit. In some embodiments, the device further includes a gel filled within the interior environment of the housing unit covering the sensor die and the substrate. The gel, e.g., silicone, fluoro silicone, etc., is configured to protect the sensor die, the electrical coupling, and the substrate from exposure to the liquid.

A semiconductor module includes a base plate made of a metal, an insulating frame provided on a peripheral edge portion of the base plate, a lead made of a metal and provided on the frame, and a semiconductor device mounted on the base plate in a space surrounded by the frame, wherein the frame is fixed to the base plate by a bonding material containing silver, the frame has concave portions formed in an inner portion which is a corner portion on a space side and an outer portion which is a corner portion on a side opposite to the inner portion in a surface thereof which faces the base plate, and the concave portions are filled with a coating material.

In a semiconductor device, a frame includes a first frame portion extending in a direction parallel to a connection surface to be connected to the connection surface and a second frame portion connecting a case and the first frame portion. The first frame portions are divided into a plurality of divided portions. At least one divided portion in the plurality of divided portions in the first frame portions is an elastic portion which can be elastically deformed from a first state where a tip end portion is inclined to be located on a lower side of the connection surface to a second state where the tip end portion extends in a direction parallel to the connection surface. The divided portion as the elastic portion is connected to the connection surface while being elastically deformed from the first state to the second state.

A microelectronics package assembly and process of making same are disclosed. The flange has an upper surface and a first coating disposed on the upper surface of the flange. The insulator has a bottom surface for mounting onto the flange and an upper surface opposite the bottom surface. A second coating is disposed on the bottom surface of the insulator and a third coating disposed on the upper surface of the insulator. The first coating, the second coating, and the third coating each have a thickness of less than or equal to 1 micron. At least one of the first coating, the second coating, and the third coating is applied via at least one of physical vapor deposition, atomic deposition, or chemical deposition.