A semiconductor device, including a board, a semiconductor module disposed on a front surface of the board, and a case that includes (1) side wall portions that are disposed on the front surface of the board and that surround, with the board, a storage area including the semiconductor module, (2) a cover portion that is disposed on the side wall portions to cover the storage area, the cover portion having a terminal opening formed therein, and (3) a guiding projection portion formed on an inner surface of the cover portion, and protruding toward the storage area. The semiconductor device further includes sealing material with which the storage area is filled and which seals the semiconductor module. The guiding projection portion has a projecting end portion that is in contact with the sealing material.

A semiconductor device, including a board, a semiconductor module disposed on a front surface of the board, and a case that includes (1) side wall portions that are disposed on the front surface of the board and that surround, with the board, a storage area including the semiconductor module, (2) a cover portion that is disposed on the side wall portions to cover the storage area, the cover portion having a terminal opening formed therein, and (3) a guiding projection portion formed on an inner surface of the cover portion, and protruding toward the storage area. The semiconductor device further includes sealing material with which the storage area is filled and which seals the semiconductor module. The guiding projection portion has a projecting end portion that is in contact with the sealing material.

According to one embodiment, a semiconductor device includes a first container and a second container. The second container is inside the first container. A semiconductor element is inside the second container. The second container is formed of a lower portion, a side portion fixed to the lower portion, and an upper portion fixed to the side portion and the first container. The side portion is a first metal material covered with a first insulator. The lower portion and the side portion of the second container are spaced from the first container. The semiconductor device may be used as a power module or the like in some instances, and the semiconductor element may be one or more transistors of the like.

According to one embodiment, a semiconductor device includes a first container and a second container. The second container is inside the first container. A semiconductor element is inside the second container. The second container is formed of a lower portion, a side portion fixed to the lower portion, and an upper portion fixed to the side portion and the first container. The side portion is a first metal material covered with a first insulator. The lower portion and the side portion of the second container are spaced from the first container. The semiconductor device may be used as a power module or the like in some instances, and the semiconductor element may be one or more transistors of the like.

A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A first metal frame is disposed over the substrate around the first semiconductor die. A first metal lid is disposed over the first metal frame. A flap of the first metal lid includes an elastic characteristic to latch onto the first metal frame. An edge of the flap can have a castellated edge. A recess in the first metal frame and a protrusion on the first metal lid can be used to latch the first metal lid onto the first metal frame. A second metal frame and second metal lid can be disposed over an opposite surface of the substrate from the first metal frame.

A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A first metal frame is disposed over the substrate around the first semiconductor die. A first metal lid is disposed over the first metal frame. A flap of the first metal lid includes an elastic characteristic to latch onto the first metal frame. An edge of the flap can have a castellated edge. A recess in the first metal frame and a protrusion on the first metal lid can be used to latch the first metal lid onto the first metal frame. A second metal frame and second metal lid can be disposed over an opposite surface of the substrate from the first metal frame.

A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.

A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.

A semiconductor module, including a ceramic board, a circuit pattern metal plate formed on a principal surface of the ceramic board, an external connection terminal bonded, via a solder, to the circuit pattern metal plate, and a low linear expansion coefficient metal plate located between the circuit pattern metal plate and the external connection terminal. The circuit pattern metal plate has a first edge portion and a second edge portion, which are opposite to each other and are respectively at a first side and a second side of the circuit pattern metal plate. The low linear expansion coefficient metal plate has a linear expansion coefficient lower than a linear expansion coefficient of the circuit pattern metal plate.

A semiconductor module, including a ceramic board, a circuit pattern metal plate formed on a principal surface of the ceramic board, an external connection terminal bonded, via a solder, to the circuit pattern metal plate, and a low linear expansion coefficient metal plate located between the circuit pattern metal plate and the external connection terminal. The circuit pattern metal plate has a first edge portion and a second edge portion, which are opposite to each other and are respectively at a first side and a second side of the circuit pattern metal plate. The low linear expansion coefficient metal plate has a linear expansion coefficient lower than a linear expansion coefficient of the circuit pattern metal plate.