A semiconductor device 100 includes a semiconductor element 12 having an electrode on a front surface, a wire 15 bonded to the electrode of the semiconductor element 12, a resin layer 22b covering a bonding portion of the wire 15 on the front surface of the semiconductor element 12, and a gel filler material 23 that seals the semiconductor element 12, the wire 15, and the resin layer 22b. By protecting the bonding portion of the wire 15 with the resin layer 22b, degradation of the wire 15 is ameliorated and the reliability of the semiconductor device 100 is improved.

In a semiconductor device, a first end of a first lead frame is connected via solder to a first circuit pattern and another end extends outside from a case. In the same way, a first end of a second lead frame is connected via solder to a third circuit pattern and another end extends outside from a case. Third and fourth circuit patterns that are covered by the first lead frame are respectively buried by insulating layers. In addition, a semiconductor element is provided via solder on a region of the first lead frame above the first circuit pattern. Wires electrically connect the semiconductor element and a region of the second lead frame above the third circuit pattern.

In a semiconductor device, a first end of a first lead frame is connected via solder to a first circuit pattern and another end extends outside from a case. In the same way, a first end of a second lead frame is connected via solder to a third circuit pattern and another end extends outside from a case. Third and fourth circuit patterns that are covered by the first lead frame are respectively buried by insulating layers. In addition, a semiconductor element is provided via solder on a region of the first lead frame above the first circuit pattern. Wires electrically connect the semiconductor element and a region of the second lead frame above the third circuit pattern.

A power semiconductor module having a pressure application body, a circuit carrier, which is embodied with a first conductor track, a power semiconductor element arranged thereon and an internal connecting device, and also having a housing which is embodied with a guide device arranged therein, with a connecting element. The connecting element is embodied as a bolt with first and second end sections and an intermediate section therebetween, wherein the first end section rests on the circuit carrier and is electrically conductively connected thereto; the second end section projects out of the housing through a cutout; and wherein the connecting element is arranged in the assigned guide device. The pressure application body has a first rigid partial body and a second elastic partial body, wherein the second partial body protrudes out of the first partial body in the direction of the housing.

A power semiconductor module having a pressure application body, a circuit carrier, which is embodied with a first conductor track, a power semiconductor element arranged thereon and an internal connecting device, and also having a housing which is embodied with a guide device arranged therein, with a connecting element. The connecting element is embodied as a bolt with first and second end sections and an intermediate section therebetween, wherein the first end section rests on the circuit carrier and is electrically conductively connected thereto; the second end section projects out of the housing through a cutout; and wherein the connecting element is arranged in the assigned guide device. The pressure application body has a first rigid partial body and a second elastic partial body, wherein the second partial body protrudes out of the first partial body in the direction of the housing.

A semiconductor device has a configuration in which a stacked assembly and a resin case are combined. The stacked assembly includes a semiconductor element, a stacked substrate on which the semiconductor element is mounted, and a metal substrate on which the stacked substrate is mounted. In the resin case, a notch groove is provided at a corner portion for reducing a stress. At least one of a width and a length of the notch groove is 2 mm or more.

A semiconductor device has a configuration in which a stacked assembly and a resin case are combined. The stacked assembly includes a semiconductor element, a stacked substrate on which the semiconductor element is mounted, and a metal substrate on which the stacked substrate is mounted. In the resin case, a notch groove is provided at a corner portion for reducing a stress. At least one of a width and a length of the notch groove is 2 mm or more.

A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board.

A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board.

A power semiconductor module includes a wiring member that electrically connects a front surface electrode of a semiconductor element and a circuit board of an insulating substrate in a housing. A resin provided in the housing covers the wiring member, and has a height in the vicinity of the wiring member. A cover covering the periphery of external terminals is provided between the resin and a first lid in the housing. A second lid is provided further outside the first lid in an aperture portion of the housing, and the space between the second lid and the first lid is filled with another resin.