An electronic device includes a printed circuit board (PCB) that supports an integrated circuit (IC) chip. The device also includes a lid over the IC chip. A thermal interface material (TIM) is configured to transfer thermal energy from the IC chip to the lid. A heat spreader forms a cavity in communication with the lid. The heat spreader is at least partially filled with a liquid that is configured to change phases during operation of the IC chip.

A packaged power device includes a ceramic package body having a top drain pad having a first area, a top source pad having a second area smaller than the first area, and a top gate pad having a third area smaller than the second area; a power device having a bottom surface affixed to a top drain pad, a die source pad coupled to the top source pad, and a die gate pad coupled to the top gate pad; and a ceramic lid affixed to the ceramic package body to form the packaged power device.

An electronic-element mounting package includes a wiring substrate having a first surface and a wiring pattern thereon; a base having a second surface and a through hole whose opening is on the second surface; a signal line penetrating the through hole and having a first end exposed from an opening of the through hole; and an insulating member between an inner surface of the through hole and the signal line and has an end portion and a main portion. The end portion has an end surface on a side of the opening of the through hole, and the main portion is farther from the opening of the through hole than the end portion. The electronic-element mounting package also has a conductive joining material with which the wiring pattern and the first end are joined. Permittivity of the end portion is larger than permittivity of the main portion.

Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate having a first surface and a second surface opposite from the first surface, and a die on the first surface of the package substrate. In an embodiment, the electronic package further comprises a socket interface on the second surface of the package substrate. In an embodiment, the socket interface comprises a first layer, wherein the first layer comprises a plurality of wells, a liquid metal within the plurality of wells, and a second layer over the plurality of wells.

A bus bar for a power semiconductor module arrangement includes a first end, and a second end. The first end is configured to be arranged inside a housing of the power semiconductor module arrangement. The second end is configured to be arranged outside of the housing and to be electrically contacted by an external bus bar. The second end includes a structured area that includes a plurality of protrusions. A height of each of the protrusions is between 10 μm and 1000 μm.

A bus bar for a power semiconductor module arrangement includes a first end, and a second end. The first end is configured to be arranged inside a housing of the power semiconductor module arrangement. The second end is configured to be arranged outside of the housing and to be electrically contacted by an external bus bar. The second end includes a structured area that includes a plurality of protrusions. A height of each of the protrusions is between 10 μm and 1000 μm.

To protect a plurality of semiconductor chips of a sawn wafer housed in a shipping case and a method of manufacturing a semiconductor device includes a step of vacuum packing a sawn wafer while being housed in a shipping case; the shipping case has the following structure: the shipping case has a lid portion that covers the upper surface of the sawn wafer and a body portion that covers the lower surface of the sawn wafer, the lid portion has a recess portion that covers a plurality of semiconductor chips and a ventilation route communicated with the recess portion. In a step of reducing pressure in the shipping case, a gas in the shipping case is discharged outside via a ventilation route.

To protect a plurality of semiconductor chips of a sawn wafer housed in a shipping case and a method of manufacturing a semiconductor device includes a step of vacuum packing a sawn wafer while being housed in a shipping case; the shipping case has the following structure: the shipping case has a lid portion that covers the upper surface of the sawn wafer and a body portion that covers the lower surface of the sawn wafer, the lid portion has a recess portion that covers a plurality of semiconductor chips and a ventilation route communicated with the recess portion. In a step of reducing pressure in the shipping case, a gas in the shipping case is discharged outside via a ventilation route.

There is provided a semiconductor module that can reduce the assembly tolerance between a case part and a base part. A semiconductor module includes: a base part having a plurality of semiconductor elements and a cooling unit configured to cool the plurality of semiconductor elements; a case part attached to the base part and defining a space in which the plurality of semiconductor elements is disposed; a first protruding portion having a shape in which a dimension in a first direction passing through a center of the first protruding portion and a dimension in a second direction crossing the first direction and passing through the center differ from each other, the first protruding portion protruding from the case part toward a side on which the base part is disposed; and a through-hole having an opening being larger than an outer periphery of the first protruding portion and following a shape of the outer periphery of the first protruding portion, wherein the through-hole is formed to pass through the base part and the first protruding portion is inserted into the through-hole.

There is provided a semiconductor module that can reduce the assembly tolerance between a case part and a base part. A semiconductor module includes: a base part having a plurality of semiconductor elements and a cooling unit configured to cool the plurality of semiconductor elements; a case part attached to the base part and defining a space in which the plurality of semiconductor elements is disposed; a first protruding portion having a shape in which a dimension in a first direction passing through a center of the first protruding portion and a dimension in a second direction crossing the first direction and passing through the center differ from each other, the first protruding portion protruding from the case part toward a side on which the base part is disposed; and a through-hole having an opening being larger than an outer periphery of the first protruding portion and following a shape of the outer periphery of the first protruding portion, wherein the through-hole is formed to pass through the base part and the first protruding portion is inserted into the through-hole.