A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

An amplifier module having a surface-mounting carrier with a base and lid is disclosed. The base in a top surface thereof provides a die pad on which a transistor is mounted, and a back surface thereof provides a back pad electrically and thermally connected to the die pad. The back pad has an area wider than the area of the die pad. The heat conduction from the transistor to the host board on which the amplifier module is mounted is effectively enhanced.

An amplifier module having a surface-mounting carrier with a base and lid is disclosed. The base in a top surface thereof provides a die pad on which a transistor is mounted, and a back surface thereof provides a back pad electrically and thermally connected to the die pad. The back pad has an area wider than the area of the die pad. The heat conduction from the transistor to the host board on which the amplifier module is mounted is effectively enhanced.

A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and K.sub.a-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.

Top-side cooling of Radio Frequency (RF) products in air cavity packages is provided. According to one aspect, an air cavity package comprises a substrate, a RF component mounted to the substrate, and a lid structure comprising a first material and being mounted to the substrate that covers the RF component such that a cavity is formed within the lid structure and about the RF component. At least one opening is provided in a top portion of the lid. The air cavity package also comprises a heat transfer structure comprising a second material and comprising a heat path extending from the top surface of the substrate through the opening(s) in the lid to the top outer surface of the air cavity package to provide a top-side thermal interface. In one embodiment, the lid is comprised of a molded material that absorbs RF signals and the heat transfer structure is metal.

Top-side cooling of Radio Frequency (RF) products in air cavity packages is provided. According to one aspect, an air cavity package comprises a substrate, a RF component mounted to the substrate, and a lid structure comprising a first material and being mounted to the substrate that covers the RF component such that a cavity is formed within the lid structure and about the RF component. At least one opening is provided in a top portion of the lid. The air cavity package also comprises a heat transfer structure comprising a second material and comprising a heat path extending from the top surface of the substrate through the opening(s) in the lid to the top outer surface of the air cavity package to provide a top-side thermal interface. In one embodiment, the lid is comprised of a molded material that absorbs RF signals and the heat transfer structure is metal.

An object of the present invention is to improve the reliability of a semiconductor device having an imaging function. A semiconductor device includes a package having a cavity and terminals (TE1), a semiconductor chip that has an imaging unit and is arranged in the cavity, and a cap material with which the cavity is sealed and which has translucency. In addition, the semiconductor device includes a mounting board that has a through-hole and terminals (TE2) and is arranged so as to electrically couple the terminals (TE1) to the terminals (TE2), a heat transfer member that is inserted into the through-hole and is coupled to the package, and a heat sink coupled to the heat transfer member.

An object of the present invention is to improve the reliability of a semiconductor device having an imaging function. A semiconductor device includes a package having a cavity and terminals (TE1), a semiconductor chip that has an imaging unit and is arranged in the cavity, and a cap material with which the cavity is sealed and which has translucency. In addition, the semiconductor device includes a mounting board that has a through-hole and terminals (TE2) and is arranged so as to electrically couple the terminals (TE1) to the terminals (TE2), a heat transfer member that is inserted into the through-hole and is coupled to the package, and a heat sink coupled to the heat transfer member.

An electrode terminal includes a body and a first bonding part. The body includes a first metal material. Then, the first bonding part is bonded to one end of the body, and includes a second metal material which is a clad material other than the first metal material. The first bonding part is ultrasonically bondable to a first bonded member. An elastic part which is elastically deformable is provided between the one end of the body and the other end of the body.