A light-emitting device includes: a resin package; and a first light-emitting element and a second light-emitting element. The resin package includes: a resin portion; a first lead having an upper surface and an end surface; a second lead having an upper surface and an end surface; and a recess having lateral surfaces and a bottom surface that includes a portion of the upper surface of the first lead and a portion of the upper surface of the second lead that are exposed from the resin portion. The first light-emitting element and the second light-emitting element are disposed in the recess. The first lead and the second lead are arranged in a first direction. The first light-emitting element and the second light-emitting element are arranged in a second direction perpendicular to the first direction.

A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.

A package has a cavity to be sealed by a lid. The package includes a heat sink having a coefficient of thermal expansion of 9 ppm/° C. or more and 15 ppm/° C. or less from 25 ° C. to 100 ° C. and a frame disposed on the heat sink, made of ceramics, and surrounding the cavity in plan view. An outer edge of the frame includes a first linear portion extending along a first direction, a second linear portion extending along a second direction orthogonal to the first direction, and a chamfer connecting the first linear portion and the second linear portion in plan view.

A method includes disposing a series of protrusions on a rectangular side panel of an open four-sided box-like structure in a frame, and attaching an electronic substrate to the frame. The electronic substrate carries one or more circuit components. The series of protrusions acts as a spring-like compensator to compensate plastic deformation, twisting or warping of the frame, and to limit propagation of stress to the electronic substrate via the frame.

A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

A semiconductor module includes: an insulation layer; a semiconductor element that includes a main electrode and is mounted on the insulation layer; a wiring member that is electrically connected to the main electrode of the semiconductor element; a first resin that encases the semiconductor element and the wiring member; and a second resin that covers a part of the wiring member. A thermal decomposition temperature or a melting point of the second resin is greater than a maximum of guaranteed operating temperature of the semiconductor element and is less than a thermal decomposition temperature or a melting point of the first resin.

A semiconductor module includes: an insulation layer; a semiconductor element that includes a main electrode and is mounted on the insulation layer; a wiring member that is electrically connected to the main electrode of the semiconductor element; a first resin that encases the semiconductor element and the wiring member; and a second resin that covers a part of the wiring member. A thermal decomposition temperature or a melting point of the second resin is greater than a maximum of guaranteed operating temperature of the semiconductor element and is less than a thermal decomposition temperature or a melting point of the first resin.

A semiconductor device, including a semiconductor chip having a first electrode on a rear surface thereof, a laminated substrate including a heat dissipation board laminated on a rear surface of an insulating board, and a case. The case includes a frame surrounding an opening penetrating the case from a front surface to a rear surface thereof, the frame being in contact with a periphery of the laminated substrate covering the opening from the rear surface of the case, and a first terminal penetrating the frame. The first terminal includes a first connection part penetrating the frame and extending out of the frame, and a first wiring part provided in the opening. The first wiring part has a wiring rear surface disposed on a front surface of the insulating board, and a wiring front surface mechanically and electrically connected to the first electrode of the semiconductor chip.

A semiconductor module (semiconductor device) includes a case that has a side wall to form a frame, the side wall having a concave portion, a multi-layer structure in which a first terminal, an insulating sheet, and a second terminal are stacked in that order and which is disposed on the concave portion, and a beam member that is attached to the concave portion of the case to fix the multi-layer structure disposed on the concave portion.

A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.