The present disclosure relates to a ring-frame power package that includes a thermal carrier, a spacer ring residing on the thermal carrier, and a ring structure residing on the spacer ring. The ring structure includes a ring body and a number of interconnect tabs that protrude from an outer periphery of the ring body. Herein, a portion of the carrier surface of the thermal carrier is exposed through an interior opening of the spacer ring and an interior opening of the ring body. The spacer ring is not electronically conductive and prevents the interconnect tabs from electrically coupling to the thermal carrier. Each interconnect tab includes a top plated area and a bottom plated area, which is electrically coupled to the top plated area.

A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

A power semiconductor module includes an insulating circuit substrate; a printed circuit board disposed over the insulating circuit substrate; and a plurality of terminals each having a rod-shaped portion and including a first protrusion and a second protrusion each protruding laterally form a side face of the rod-shaped portion; wherein at least one of the plurality of terminals is inserted to one of the through-holes of the printed circuit board and is locked to the one of the through-holes via the first protrusion, and wherein at least another one of the plurality of terminals is inserted to another one of the through-holes of the printed circuit board and is locked to said another one of the through-holes via the second protrusion, and an end of the at least another one of the plurality of terminals is electrically connected to a conductive plate on the insulating circuit substrate.

A power semiconductor module includes an insulating circuit substrate; a printed circuit board disposed over the insulating circuit substrate; and a plurality of terminals each having a rod-shaped portion and including a first protrusion and a second protrusion each protruding laterally form a side face of the rod-shaped portion; wherein at least one of the plurality of terminals is inserted to one of the through-holes of the printed circuit board and is locked to the one of the through-holes via the first protrusion, and wherein at least another one of the plurality of terminals is inserted to another one of the through-holes of the printed circuit board and is locked to said another one of the through-holes via the second protrusion, and an end of the at least another one of the plurality of terminals is electrically connected to a conductive plate on the insulating circuit substrate.

A semiconductor package includes an encapsulant body; an upper electrically conductive element having an outwardly exposed metal surface; a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the upper electrically conductive element and the upper electrically conductive layer; a power semiconductor chip between the upper electrically conductive element and the upper electrically conductive layer; and a second electrically conductive spacer between the upper electrically conductive element and the power semiconductor chip, a first carrier region of the upper electrically conductive layer is connected to a first power terminal, a second carrier region of the upper electrically conductive layer is alongside the first carrier region and is connected to a phase terminal, a first region of the upper electrically conductive element is connected to a second power terminal.

A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.

A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.

A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.

A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.