A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.

Provided is a semiconductor device including: a substrate; an electrode layer provided on the substrate; a semiconductor chip being provided on the electrode layer, including a first side surface portion having a first angle with respect to a substrate surface of the substrate, and including a second side surface portion being provided below the first side surface portion and having a second angle smaller than the first angle with respect to the substrate surface; and a resin being provided around the electrode layer and the semiconductor chip and being in contact with the first side surface portion and the second side surface portion.

An integrated circuit die includes input buffer circuits that are enabled during an input mode of operation in response to first control signals to transmit input signals into the integrated circuit die from conductive bumps. Each of the input buffer circuits is coupled to one of the conductive bumps. The integrated circuit die also includes output buffer circuits that are each coupled to one of the conductive bumps. The output buffer circuits are enabled during an output mode of operation in response to second control signals to transmit output signals from the integrated circuit die to the conductive bumps. The input buffer circuits are disabled from transmitting signals during the output mode of operation in response to the first control signals. The output buffer circuits are disabled from transmitting signals during the input mode of operation in response to the second control signals.

In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

A circuit system includes an interposer that has a first clock network and first and second integrated circuit dies that are mounted on the interposer. The first integrated circuit die includes a phase detector circuit, an adjustable delay circuit that generates a second clock signal in response to a first clock signal received from the first clock network, and a second clock network that generates a third clock signal in response to the second clock signal. The second integrated circuit die comprises a third clock network that generates a fourth clock signal in response to the first clock signal received from the first clock network. The phase detector circuit controls a delay provided by the adjustable delay circuit to the second clock signal based on a phase comparison between phases of the third and fourth clock signals.

A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.

A chip package includes a first substrate, a second substrate, a first conductive layer, and a metal layer. The first substrate has a bottom surface and an inclined sidewall adjoining the bottom surface, and an obtuse angle is between the bottom surface and the inclined sidewall. The second substrate is over the first substrate and has a portion that laterally extends beyond the inclined sidewall of the first substrate. The first conductive layer is between the first substrate and the second substrate. The metal layer is on said portion of the second substrate, on the bottom surface and the inclined sidewall of the first substrate, and electrically connected to an end of the first conductive layer.

An electronic device includes a semiconductor die, an enclosure, leads extending outwardly from the enclosure and electrically connected to the semiconductor die, and wherein the leads have a reduced cross-sectional area along a longitudinal length of the lead. The electronic device is designed to reduce the occurrence of crack formation between the leads and a printed circuit board.

A manufacturing method of a semiconductor package includes the following steps. An integrated circuit structure is provided, wherein the integrated circuit structure includes an integrated circuit and a metallization layer covering a back surface of the integrated circuit. An encapsulation material is provided to laterally encapsulate the integrated circuit structure. A redistribution structure is provided over the integrated circuit structure and the encapsulation material, wherein the redistribution structure includes a thermal metal layer furthermost from the integrated circuit structure, wherein the thermal metal layer is thermally coupled to the metallization layer. A solder layer is provided over the thermal metal layer, wherein the solder layer is thermally coupled to the thermal metal layer.

An integrated fan out package is utilized in which the dielectric materials of different redistribution layers are utilized to integrate the integrated fan out package process flows with other package applications. In some embodiments an Ajinomoto or prepreg material is utilized as the dielectric in at least some of the overlying redistribution layers.