H01L23/315

Semiconductor packages having improved thermal discharge and electromagnetic shielding characteristics

A semiconductor package may include a first semiconductor chip on and electrically connected to a wiring substrate, an intermediate layer on the first semiconductor chip and covering an entire surface of the first semiconductor chip, a second semiconductor chip on the intermediate layer and electrically connected to the wiring substrate, a mold layer on the wiring substrate and covering the first semiconductor chip and the second semiconductor chip, the mold layer including one or more inner surfaces defining a mold via hole that exposes a portion of a surface of the intermediate layer, an electromagnetic shielding layer on the one or more inner surfaces of the mold layer and further on one or more outer surfaces of the mold layer, and a thermal discharge layer on the electromagnetic shielding layer in the mold via hole, such that the thermal discharge layer fills the mold via hole.

Semiconductor device package with conductive pillars and method for manufacturing the same

A semiconductor device package includes a conductive layer, a first conductive pillar, a circuit layer and a second conductive pillar. The conductive layer has a first surface. The first conductive pillar is disposed on the first surface of the conductive layer. The circuit layer is disposed over the conductive layer. The circuit layer has a first surface facing the conductive layer. The second conductive pillar is disposed on the first surface of the circuit layer. The first conductive pillar is physically spaced apart from the second conductive pillar and electrically connected to the second conductive pillar.

METHOD OF FORMING SEMICONDUCTOR PACKAGE WITH COMPOSITE THERMAL INTERFACE MATERIAL STRUCTURE

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

PACKAGE COMPRISING A SUBSTRATE, AN INTEGRATED DEVICE, AND AN ENCAPSULATION LAYER WITH UNDERCUT

A package that includes a substrate, an integrated device, a first encapsulation layer and a void. The substrate includes a first surface. The integrated device is coupled to the first surface of the substrate. The first encapsulation layer is located over the first surface of the substrate and the integrated device. The first encapsulation layer includes an undercut relative to a side surface of the integrated device. The void is located between the integrated device and the first surface of the substrate. The void is laterally surrounded by the undercut of the encapsulation layer.

OPTICAL DIE-LAST WAFER-LEVEL FANOUT PACKAGE WITH FIBER ATTACH CAPABILITY

Manufacturing a semiconductor chip package with optical fiber attach capability includes preparing a photonic integrated circuit by etching a v-groove in a front side fiber coupling region; assembling the photonic integrated circuit on an organic redistribution layer; etching the organic redistribution layer; and attaching an optical fiber to the front side fiber coupling region.

SPACER WITH PATTERN LAYOUT FOR DUAL SIDE COOLING POWER MODULE

A method includes bonding a device die to a direct bonded metal (DBM) substrate, bonding a spacer block to the device die, and at least partially reducing coefficient of thermal expansion (CTE) mismatches between the DBM substrate, the spacer block and the device die. At least partially reducing the CTE mismatches between the DBM substrate, the spacer block and the device die includes at least one of: disposing an arrangement of pillars and grooves in a surface region of the spacer block coupled to the device die, disposing at least one cavity in the spacer block, and disposing a groove in an outer conductive layer of the DBM substrate.

Flat no-leads package, packaged electronic component, printed circuit board and measurement device

A flat no-leads package, the flat no-leads package includes a leadframe for electrically connecting an integrated circuit (IC) chip which in a mounted configuration is arranged in a center portion of the flat no-leads package. The leadframe has at least one RF lead pin; and an isolating encapsulation which is at least partially encapsulating the leadframe such that contact surfaces of the leadframe are electrically contactable at least from a bottom side of the flat no-leads package; wherein at least one of the RF lead pin has a first and second contact surfaces. A cross-section of the RF lead pin increases from the first contact surface to the second contact surface both in a horizontal direction and in a direction vertical thereto. Further, a printed circuit board having a flat no-leads package and a measurement device having a flat no-leads package are provided.

SEMICONDUCTOR DEVICE AND BONDING METHOD
20220199566 · 2022-06-23 ·

Semiconductor device A1 of the disclosure includes: semiconductor element 11 having element obverse surface 11a and element reverse surface 11b spaced apart from each other in z direction (first direction) with first region 111 formed on the element obverse surface 11a; metal plate 31 (electrode member) disposed on the element obverse surface 11a and electrically connected to the first region 111; electrically conductive substrate 22A (first conductive member) disposed to face the element reverse surface 11b and bonded to the semiconductor element 11; electrically conductive substrate 22B (second conductive member) spaced apart from the conductive substrate 22A (first conductive member); and lead member 5 (connecting member) electrically connecting the metal plate 31 (electrode member) and the conductive substrate 22B (second conductive member). The lead member 5 (connecting member) is bonded to the metal plate 31 (electrode member) by laser welding. The semiconductor device of this configuration provides improved reliability.

SENSOR PACKAGE CAVITIES WITH POLYMER FILMS
20220199479 · 2022-06-23 ·

In examples, a sensor package includes a semiconductor die, a sensor on the semiconductor die, and a mold compound covering the semiconductor die. The mold compound includes a sensor cavity over the sensor. The sensor package includes a polymer film member on the sensor and circumscribed by a wall of the mold compound forming the sensor cavity. The polymer film member is exposed to an exterior environment of the sensor package.

Electronic component module

An electronic component module includes an electronic component, a structure body, a through wiring, and an insulator. The structure body covers at least a portion of the electronic component and has conductivity. The through wiring extends through the structure body. The insulator is disposed at least between the through wiring and the structure body.