A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

In a described example, an apparatus includes: a semiconductor die with a component on a device side surface; a die seal surrounding the component on the device side surface; a package substrate having bond pads on a die side surface; a package substrate seal formed on the die side surface of the package substrate corresponding to the die seal on the semiconductor die; the semiconductor die flip chip mounted on the bond pads of the package substrate with solder joints connecting post connects on the semiconductor die to the bond pads of the package substrate; a mold compound seal formed by the die seal and the package substrate seal; and mold compound covering a portion of the semiconductor die, a portion of the die side of the package substrate, and contacting the mold compound seal, the mold compound spaced from the component.

In examples, a sensor package includes a semiconductor die, a sensor on the semiconductor die, and a mold compound covering the semiconductor die. The mold compound includes a sensor cavity over the sensor. The sensor package includes a polymer film member on the sensor and circumscribed by a wall of the mold compound forming the sensor cavity. The polymer film member is exposed to an exterior environment of the sensor package.

The present disclosure is directed to embodiments of sensor package including a doped resin on respective surfaces and sidewalls of a transparent portion, a sensor die, and a support structure extending from the transparent portion to the sensor die. The support structure suspends the transparent portion over a sensor of the sensor die. The doped resin is doped with an additive material, and the additive material is activated by exposing the doped resin to a laser. The doped resin is exposed to the laser forming conductive layers extending along the doped resin for providing electrical connections within the sensor package and to electronic components external to the embodiments of the sensor die packages. The conductive layers are at least partially covered by a non-conductive layer.

A semiconductor device includes a package substrate, and a first die group bonded onto the package substrate. The first die group characterized by a first thickness. The semiconductor device also has a second die group bonded onto the package substrate. The second die group characterized by a second thickness. The semiconductor device further includes a carrier substrate disposed on the first die group. The carrier substrate is characterized by a third thickness that is a function of a difference between the first thickness and the second thickness. A molding compound material is disposed on the package substrate and covers the first die group and the second die group. The molding compound material includes a cavity between the first die group and the second die group.

Embodiments described herein may be related to apparatuses, processes, and techniques for a dam structure on a substrate that is proximate to a die coupled with the substrate, where the dam decreases the risk of die shift during encapsulation material flow over the die during the manufacturing process. The dam structure may fully encircle the die. During encapsulation material flow, the dam structure creates a cavity that moderates the different flow rates of material that otherwise would exert different pressures the sides of the die and cause to die to shift its position on the substrate. Other embodiments may be described and/or claimed.

Semiconductor devices and methods of manufactured are presented in which a first redistribution structure is formed, semiconductor devices are bonded to the first redistribution structure, and the semiconductor devices are encapsulated in an encapsulant. First openings are formed within the encapsulant, such as along corners of the encapsulant, in order to help relieve stress and reduce cracks.

A semiconductor device of an aspect of the disclosure includes a switching element, a substrate, a front electroconductive layer, first through third terminals and a sealing resin. The first through third terminals project toward the same side from the sealing resin along a first direction crossing the substrate thickness direction. The first through third terminals are spaced apart in a second direction crossing the thickness and first directions. The first terminal is at an outermost side in the second direction among the first through third terminals. The sealing resin has root-side and tip-side parts. The root-side part is between the first and third terminals in the second direction and offset in the first direction toward the switching element side of the first and third terminals. The tip-side part is offset in the first direction toward the tip side of the first and third terminals exposed from the sealing resin.

An electronic device includes a substrate, a bump, a chip, and an adhesive layer. The substrate includes a first connection pad. The bump is disposed on the first connection pad. The chip includes a second connection pad. The bump is disposed between the first connection pad and the second connection pad. The adhesive layer is disposed between the substrate and the chip. A dissipation factor of the adhesive layer is less than or equal to 0.01 at a frequency of 10 GHz. A manufacturing method of an electronic device includes the following: providing a substrate, where the substrate includes a first connection pad; applying an adhesive layer on the substrate; patterning the adhesive layer, such that the adhesive layer produces an opening exposing the first connection pad; forming a bump on the first connection pad; and bonding the chip onto the bump through the second connection pad.

An electronic device includes a carrier substrate with an electronic IC chip mounted on top of the carrier substrate. An encapsulation block on top of the front face of the carrier substrate embeds the IC chip. The encapsulation block has a through-void for positioning and confinement that extends through the encapsulation block to the top of the carrier substrate. At least one electronic component is positioned within the through-void and mounted to the top of the carrier substrate. Solder bumps or pads are located within the through-void to electrically connect the at least one electronic component to the carrier substrate.