A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

In one aspect, a method of packaging a semiconductor module includes providing a semiconductor module having a first surface, a second surface opposite the first surface and edge sides extending between the first surface and the second surface. A packaging assembly is formed at least partly by a 3D printing process. The packaging assembly includes the semiconductor module and a protective covering that extends over the first surface.

An interconnect structure and a method of fabrication of the same are introduced. In an embodiment, a post passivation interconnect (PPI) structure is formed over a passivation layer of a substrate. A bump is formed over the PPI structure. A molding layer is formed over the PPI structure. A film is applied over the molding layer and the bump using a roller. The film is removed from over the molding layer and the bump, and the remaining material of the film on the molding layer forms the protective layer. A plasma cleaning is preformed to remove the remaining material of the film on the bump.

Integrated circuits with a molded package including a cavity and a semiconductor die spaced from an interior surface of the molded package within the cavity. The semiconductor die includes one or more electrical components, a thermal control component to control the temperature of the electrical component, and a driver to provide a current or voltage signal to the thermal control component at least partially according to a setpoint signal.

A package comprising, an integrated circuit, IC, die comprising circuitry configured to generate signalling for transmission to a waveguide and/or receive signalling from a waveguide via a launcher, the die coupled to an interconnect layer extending out from a footprint of the die; and the launcher is formed in a launcher-substrate, separate from the die, the launcher coupled to the die to pass said signalling therebetween by a connection in said interconnect layer, wherein said launcher comprises a launcher element mounted in a first plane within the launcher-substrate and a waveguide-cavity comprising a ground plane arranged opposed to and spaced from the first plane, the waveguide-cavity further defined by at least one side wall extending from the ground plane towards the first plane; and wherein said die and said launcher are at least partially surrounded by mould material of said package.

According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

A hybrid integrated heat spreader suitable for an integrated circuit (IC) die package. The hybrid integrated heat spreader includes a top sheet material and a sealant interface material located where the heat spreader is to contact an assembly substrate. The sealant interface material may offer greater adhesion to a sealant employed between the interface material and the package substrate. In some examples, the sealant interface material has a greater surface roughness and/or a different composition than a surface of the integrated heat spreader that is in close thermal contact with an IC die through a thermal interface material. With the sealant interface material improving adhesion, the sealant may have a higher bulk modulus, enabling the integrated heat spreader to impart greater stiffness to the IC die package assembly.

A package structure and a manufacturing method for the same are provided. The package structure includes a circuit, a mold sealing layer, a conductive metal board, and a conductive layer. The circuit board includes a substrate and a first electronic element disposed on the substrate. The mold sealing layer is disposed on the substrate and covers the first electronic element. The mold sealing layer has a top surface, a bottom surface corresponding to the top surface, and a side surface connected between the top surface and the bottom surface. The conductive metal board is disposed on the top surface and adjacent to the first electronic element. The conductive layer is disposed on the side surface and electrically connected to the conductive metal board. The conductive metal board and the conductive layer are each an independent component.

Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.