A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is less than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.

A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.

Semiconductor device and method of forming the same are disclosed. One of the semiconductor devices includes a semiconductor substrate, a passivation layer and a conductive pattern. The semiconductor substrate includes a conductive pad thereover. The passivation layer over the semiconductor substrate. The conductive pattern is penetrating through the passivation layer and electrically connected to the conductive pad, wherein a sidewall of the conductive pattern has at least one turning point.

A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

The purpose of the present invention is to provide a photosensitive resin composition that yields a cured film having exceptional heat resistance, elongation, chemical resistance, permittivity, and dielectric tangent while being curable under low-temperature heat treatments, the percentage of film remaining after development being exceptional. To solve the above problem, the photosensitive resin composition of the present invention has the following configuration. Specifically, a photosensitive resin composition that contains a resin (A) and a photopolymerization initiator (B), said resin (A): containing one or more structural units selected from the group consisting of specific structural units represented by formula (1), formula (3), and formula (5); and also containing one or more structural units selected from the group consisting of structural units represented by formula (2), formula (4), and formula (6).

A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.

The technology of this application relates to a switching power module that includes a substrate, a die embedded in the substrate, and a packaging layer. The packaging layer covers an integrated circuit layout layer of the die. The packaging layer packages the integrated circuit layout layer of the die, the die includes a composite material layer covering the integrated circuit layout layer, and the composite material layer includes at least two material layers that have different functions. The at least two material layers include a first material layer covering the integrated circuit layout layer, the first material layer is a mixed layer of undoped silicate glass and tetraethyl orthosilicate, and the first material layer is filled in a gap between metal protrusions of the integrated circuit layout layer, thereby improving an isolation effect between the metal protrusions. The mixed layer of the undoped silicate glass and the tetraethyl orthosilicate has a good thermal stress effect.

A method of packaging a semiconductor device includes: bonding a ball at an end of a bond wire to a bond pad of a semiconductor device die in an aperture of a shielding layer of the semiconductor device; and sealing the part of the bond pad exposed by the aperture of the shielding layer by deforming the ball of the bond wire to fill the aperture of the shielding layer. The aperture of the shielding layer includes an edge wall, and exposes a part of the bond pad. The shielding layer covers a remaining part of the bond pad. The aperture of the shielding layer is completely filled with the ball of the bond wire, thereby deforming the edge wall of the shielding layer.

An electronic component includes a mold layer and a semiconductor die including a low ohmic first portion and a high ohmic second portion. The low ohmic first portion has an active area. The high ohmic second portion is arranged on the mold layer.