Embodiments described herein may be related to apparatuses, processes, and techniques related to creating deep cavities within a substrate or at an edge of the substrate, by etching a cavity in the substrate to a first copper stop layer, removing the first copper stop layer, and then etching deeper into the cavity to a second copper stop layer. In embodiments this process may be repeated until the desired cavity depth is reached. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to thermally and/or electrically coupling a thermal die to the surface of a photonic integrated circuit (PIC) within an open cavity in a substrate, where the thermal die is proximate to a laser on the PIC. Other embodiments may be described and/or claimed.

Implementations of a semiconductor package may include one or more semiconductor die embedded in a substrate; at least three pin fin terminals coupled to the substrate; at least one signal lead connector and a fixture portion coupled to the substrate; and a coating directly coupled to all surfaces of the substrate exposed to a coolant during operation. The fixture portion may be configured to be fastened to a fixture in an immersion cooling enclosure that may include the coolant.

A thermally conductive and electrically insulating substrate is provided. The thermally conductive and electrically insulating substrate includes a thermally conductive base, an electrically insulating layer, and one or more metal sheets. The electrically insulating layer is disposed on the thermally conductive base, and the one or more metal sheets are disposed on the electrically insulating layer. The metal sheet is allowed to have one or more chips arranged thereon, and a surface of the metal sheet where the metal sheet is allowed to be engaged with the chip is not parallel to a surface of the electrically insulating layer where the electrically insulating layer is mated with the metal sheet.

Provided are a heat dissipation structure and a heat dissipation system. The heat dissipation structure includes a heat dissipation channel and a plurality of heat dissipation fins. The plurality of heat dissipation fins are arranged on at least one side of the heat dissipation channel. Heat dissipation fins arranged on the same side of the heat dissipation channel are arranged along an extension direction of the heat dissipation channel. The heat dissipation channel and the plurality of heat dissipation fins are each formed as a cavity structure. Each heat dissipation fin includes a first end and a second end arranged opposite to each other. The first end is a closed end, and the second end is an open end. The second end communicates with the heat dissipation channel.

A heat-radiating sheet, in which when after sandwiching a heat-radiating grease between a heat-radiating sheet arranged on an aluminum plate and a glass plate, a heat cycle test is performed 100 cycles, an area ratio of an area of the heat-radiating grease after performing the heat cycle test of 100 cycles to an area of the heat-radiating grease before performing the heat cycle test is 1.0 to 2.0. A heat-radiating sheet laminate includes a heat-radiating sheet and a heat-radiating grease layer formed on the surface of the heat-radiating sheet. A structure includes the heat-radiating sheet, a heat-generating element, and the heat-radiating grease intervening between the heat-radiating sheet and the heat-generating element. A heat-radiating treatment method of a heat-generating element includes a step of applying a heat-radiating grease on the heat-radiating sheet and a step of arranging a heat-generating element on the heat-radiating sheet having the heat-radiating grease applied thereon.

A cooling plate for cooling microchip having redundant cooling fluid circulation. A primary fluid cooling loop removes heat directly from the microchip. A secondary cooling loop acts as a condenser for two phase cells, thus removing heat indirectly from the microchip. The cold plate may be fabricated as two parts bottom plate and top plate, wherein the primary cooling loop is formed in the bottom plate and the secondary cooling loop is formed in the top plate. Two-phase, self-contained cells may be immersed in the primary cooling loop and act to transport heat from the microchip to the secondary cooling loop.

A method for forming a silicon carbide module integrated structure includes a heat sink and a silicon carbide module, which is fixedly connected with the heat sink. The solder paste is arranged between the heat sink and the silicon carbide module, and the heat sink and the silicon carbide module are hot pressed through a welding process to weld the silicon carbide module and the heat sink together.

A cooling device includes a cooling plate with a bottom wall portion with a lower surface which contacts a heat-generating component, a top wall portion which covers an upper surface of the bottom wall portion, a side wall portion which couples the bottom wall portion and the top wall portion, and an internal space which is surrounded by the bottom wall portion, the top wall portion, and the side wall portion to define a first cooling medium flow passage. The bottom wall portion includes blades on the upper surface. An inlet port or an outlet port is on one end side of the first cooling medium flow passage. An inner peripheral wall of the side wall portion includes a first bent portion which is bent convex inward between ends of the blades and the at least one of the inlet port and the outlet port.

A protective shroud includes a top plate, a first side plate that is adapted to be disposed proximate a first edge region of a plurality of cooling fins of a heat exchanger for an integrated circuit, and a second side plate that is adapted to be disposed proximate a second edge region of the plurality of cooling fins.