A semiconductor structure with a back gate includes a device wafer includes a front side and a back side. A transistor is disposed on the front side, wherein the transistor includes a gate structure, a source and a drain. An interlayer dielectric covers the transistor. A first metal layer and a second metal layer are within the interlayer dielectric. A first conductive plug is within the interlayer dielectric and contacts the source and the first metal layer. A second conductive plug is disposed within the interlayer dielectric and contacts the drain and the second metal layer. A back gate, a source conductive pad and a drain conductive pad are disposed on the back side. A first via plug penetrates the device wafer to electrically connect the source conductive pad and the source. A second via plug penetrates the device wafer to electrically connect the drain conductive pad and the drain.

A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.

A thermally conductive sheet comprising an anisotropic filler 12 in a polymer matrix 14, wherein the anisotropic filler 12 appears on at least one surface and the at least one surface has an arithmetic mean peak curvature (Spc) of 18000 (1/mm) or less.

A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.

Embodiments disclosed herein comprise a die and methods of forming a die. In an embodiment, a die comprises, a die substrate, wherein the die substrate has a first thermal conductivity, and a first layer over the die substrate, wherein the first layer has a second thermal conductivity that is greater than the first thermal conductivity. In an embodiment, the die further comprises a second layer over the first layer, wherein the second layer comprises transistors.

Techniques for integrating two-phase cooling into a microprocessor chip package lid are provided. In one aspect, a vapor chamber lid device includes: an evaporator plate; a condenser plate attached to the evaporator plate such that a cavity is formed between the evaporator plate and the condenser plate; a thermal insulation layer sandwiched between the evaporator plate and the condenser plate; and a working fluid enclosed within the cavity, wherein the working fluid partially fills the cavity. At least one heat-dissipating device can be placed in thermal contact with the evaporator plate via a thermal interface material. A method is also provided for forming the vapor chamber lid device.

A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of Al.sub.2O.sub.3, 8.0% or more of B.sub.2O.sub.3, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion α.sub.100/200 at 100 to 200° C. of from 3.10 ppm/° C. to 3.70 ppm/° C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cm.sup.3 or more.

A package substrate includes a multilayer circuit structure, a gas-permeable structure, a heat conducting component, a first circuit layer, a second circuit layer and a build-up circuit structure. The gas-permeable structure and the heat conducting component are respectively disposed in a first and a second through holes of the multilayer circuit structure. The first and the second circuit layers are respectively disposed on an upper and a lower surfaces of the multilayer circuit structure and expose a first and a second sides of the gas-permeable structure. The build-up circuit structure is disposed on the first circuit layer and includes at least one patterned photo-imageable dielectric layer and at least one patterned circuit layer alternately stacked. The patterned circuit layer is electrically connected to the first circuit layer by at least one opening. The build-up circuit structure and the first circuit layer exposed by a receiving opening form a recess.

Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.