A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.

The present disclosure provides a composite including a nitride sintered body having a porous structure and a semi-cured product of a heat-curable composition impregnated into the nitride sintered body, wherein a dielectric breakdown voltage obtainable after disposing the composite between adherends, heating and pressurizing the composite for 5 minutes under the conditions of 200° C. and 10 MPa, and further heating the composite for 2 hours under the conditions of 200° C. and atmospheric pressure, is greater than 5 kV.

A circuit base of the present disclosure includes a base made of ceramic, a joint layer located on the base, and a metal layer located on the joint layer. The metal layer contains copper. The joint layer contains aluminum, silicon, and oxygen.

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include an interposer; a first microelectronic component having a first surface coupled to the interposer by a first direct bonding region and an opposing second surface; a second microelectronic component having a first surface coupled to the interposer by a second direct bonding region and an opposing second surface; a liner material on the surface of the interposer and around the first and second microelectronic components; an inorganic fill material on the liner material and between the first and second microelectronic components; and a third microelectronic component coupled to the second surfaces of the first and second microelectronic components. In some embodiments, the liner material, the inorganic fill material, and a material of the third microelectronic component may include a thermally conductive material.

Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.

One aspect of the present invention is a composite including: a porous boron nitride sintered body; and a resin filled in pores of the boron nitride sintered body, wherein the boron nitride sintered body has an average pore diameter of 3.5 μm or less.

An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

A thermal-conductive silicone composition containing: (A) a hydrolysable organopolysiloxane having an alkoxysilyl group; and (B) aluminum nitride particles having an average particle size of 0.5 μm or more and 2.0 μm or less and contained in an amount of 50 to 70 volume %. A content of coarse particles in the aluminum nitride particles is 1.0 volume % or less relative to the entire aluminum nitride particles, the coarse particles having particle sizes of 10 μm or more according to a particle size distribution measurement method by laser diffraction. The thermal-conductive silicone composition has a heat conductivity of 1.3 W/mK or more according to a hot disc method. The present invention provides: a thermal-conductive silicone composition having high heat conductivity and being compressible to 10 μm or less; and a production method of the thermal-conductive silicone composition.

A hermetically sealed package includes: a heat-dissipating base substrate configured for dissipating heat from the hermetically sealed package; a cap arranged on the heat-dissipating base substrate, the cap and the heat-dissipating base substrate jointly forming at least a part of the package; at least one functional area hermetically sealed by the package; at least one laser bonding line configured for hermetically sealing the package, the laser bonding line having a height perpendicular to a bonding plane of the laser bonding line.