A basic structural body for constructing heat dissipation device and a heat dissipation device are disclosed. The heat dissipation device includes a first basic structural body having a wick structure formed on one side surface thereof; and the first basic structural body and the wick structure are structural bodies formed layer by layer. Two pieces of first basic structural bodies can be correspondingly closed together to construct a heat dissipation device internally defining an airtight chamber. In this manner, the heat dissipation device can be designed in a more flexible manner.

An object is to provide a semiconductor module capable achieving both a heat radiation property and an insulation property. A semiconductor module includes: a substrate having a main surface and a main surface on a side opposite to the main surface; a semiconductor device mounted on the main surface; and a heat sink attached to the main surface via an insulation sheet having a thermal conductivity, wherein the substrate includes a through hole passing from the main surface to the main surface, the semiconductor device includes a plurality of electrodes exposed from a surface facing the main surface and a protrusion formed between the plurality of electrodes to be inserted through the through hole, and the insulation sheet is formed so that a length in a thickness direction of the substrate is larger than a length of a tip end portion of the protrusion protruding from the through hole.

A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm.sup.−1K.sup.−1 and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor. A method of forming a semiconductor device includes providing a base substrate, forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is greater than 200 Wm.sup.−1K.sup.−1. The method further includes forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further includes removing the base substrate.

A nitride-based ceramics resin composite body having thermal conductivity, electrical insulation, and adhesion to adherends equal to conventional products, and having improved heat resistance reliability during the reflow process, and a thermal conductive insulating adhesive sheet using the same are provided. A nitride-based ceramics resin composite body in which a thermosetting resin composition is impregnated in a porous nitride-based ceramics sintered body is provided. The thermosetting resin composition includes a specific epoxy resin and a bismaleimide triazine resin, and a water absorption of the thermosetting resin composition in a completely cured state measured in accordance with method A in JIS K7209 (2000) is 1% by mass or less.

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

An electronic device, including a substrate and a stack of dies stacked on the substrate. The stack of dies includes: (a) one or more functional dies, the functional dies including functional electronic circuits and being configured to exchange electrical signals at least with the substrate, and (b) one or more dummy dies, the dummy dies being disposed among dies forming the stack and being configured to: (i) dissipate heat generated by the one or more functional dies and (ii) pass electrical signals exchanged between the substrate and the one or more functional dies or between two or more of the functional dies.

Provided is a boron nitride sintered body including boron nitride particles and pores, the boron nitride sintered body having a sheet shape and a thickness of less than 2 mm. Provided is a method for manufacturing a boron nitride sintered body, the method including a sintering step of molding and heating a blend containing a boron carbonitride powder and a sintering aid to obtain a sheet-shaped boron nitride sintered body including boron nitride particles and pores, in which a thickness of the boron nitride sintered body obtained in the sintering step is less than 2 mm.

A semiconductor chip includes semiconductor dice contained in a packaging apparatus including a cover and a plate, thereby forming a vapor chamber. The semiconductor dice and intermediate layers are alternately stacked. A capillary mechanism is provided on a horizontal internal face of the cover. Nets are provided on vertical internal faces of the cover, around the capillary mechanism. Each of the intermediate layers includes protuberances in contact with the nets. A channel is defined between any adjacent two of the protuberances. The channels travel past the intermediate layers. Coolant filled in the vapor chamber is turned into vapor after absorbing heat. The vapor ascends to the cover via the channels. The coolant is returned into liquid after transferring heat to the cover. The liquid descends to the plate. Thus, the coolant is circulated in the vapor chamber. Each of the intermediate layers includes a capillary structure to facilitate the circulation of the coolant.

An IC device includes a heat spreader, an electronic component over the heat spreader, an optical component over the electronic component, a multilayer structure over the optical component, and a redistribution structure over the multilayer structure. The multilayer structure includes a waveguide optically coupled to the optical component. The redistribution structure is electrically coupled to the electronic component by vias through the optical component and the multilayer structure.

A heat sink includes first to fifth layers. The first layer supports a frame made of ceramics, is made of copper, and has a thickness t.sub.1. The second layer is laminated to the first layer, is made of molybdenum, and has a thickness t.sub.2. The third layer is laminated to the second layer, is made of copper, and has a thickness t.sub.3. The fourth layer is laminated to the third layer, is made of molybdenum, and has a thickness t.sub.4. The fifth layer is laminated to the fourth layer, is made of copper, and has a thickness t.sub.5. A formula 3≤t.sub.1/t.sub.5≤5 is satisfied. A formula 3≤t.sub.3/t.sub.5≤5 is satisfied.