A package has a cavity to be sealed by a lid. The package includes a heat sink having a coefficient of thermal expansion of 9 ppm/° C. or more and 15 ppm/° C. or less from 25 ° C. to 100 ° C. and a frame disposed on the heat sink, made of ceramics, and surrounding the cavity in plan view. An outer edge of the frame includes a first linear portion extending along a first direction, a second linear portion extending along a second direction orthogonal to the first direction, and a chamfer connecting the first linear portion and the second linear portion in plan view.

3D semiconductor packages and methods of forming 3D semiconductor package are described herein. The 3D semiconductor packages are formed by mounting a die stack on an interposer, dispensing a thermal interface material (TIM) layer over the die stack and placing a heat spreading element over and attached to the die stack by the TIM layer. The TIM layer provides a reliable adhesion layer and an efficient thermally conductive path between the die stack and interposer to the heat spreading element. As such, delamination of the TIM layer from the heat spreading element is prevented, efficient heat transfer from the die stack to the heat spreading element is provided, and a thermal resistance along thermal paths through the TIM layer between the interposer and heat spreading element are reduced. Thus, the TIM layer reduces overall operating temperatures and increases overall reliability of the 3D semiconductor packages.

A monolithic three-dimensional integrated circuit including a first device, a second device on the first device, and a thermal shield stack between the first device and the second device. The thermal shield stack includes a thermal retarder portion having a low thermal conductivity in a vertical direction, and a thermal spreader portion having a high thermal conductivity in a horizontal direction. The thermal shield stack of the monolithic three-dimensional integrated circuit includes only dielectric materials.

A miniaturized and high-power semiconductor package device with its own heat-dissipating ability includes a heat conducting carrier, a redistribution layer, an electronic device, electronic components, a molding layer, and a solder ball. The heat conducting carrier includes an opening. The redistribution layer is formed on the heat conducting carrier. The redistribution layer has a circuit layer. The electronic device and the electronic components are disposed on a first surface of the redistribution layer away from the heat conducting carrier. The molding layer surrounds the electronic device and covers the electronic component. The solder balls are disposed in the opening, are in contact with a second surface of the redistribution layer opposite to the first surface, and are electrically connected to the circuit layer.

A miniaturized and high-power semiconductor package device with its own heat-dissipating ability includes a thermal conductor, a redistribution layer, an electronic device, a molding layer, and a solder ball. The redistribution layer includes a first surface defining an opening, a second surface opposite to the first surface, and a circuit layer. The thermal conductor is disposed in the opening. The electronic device is disposed on the first surface of the redistribution layer above the thermal conductor. The molding layer is formed on the first surface and surrounding the electronic device. The solder balls are disposed on the second surface of the redistribution layer and can form electrical connections to the circuit layer.

A heat-dissipating member includes aluminum oxide ceramics that includes crystal particles of aluminum oxide. The aluminum oxide ceramics includes 98 mass % or higher of aluminum in terms of Al.sub.2O.sub.3 with respect to 100 mass % of all constituents. The crystal particles have an average equivalent circle diameter of 1.6 μm or more and 2.4 μm or less. An equivalent circle diameter cumulative distribution curve of the crystal particles has a first diameter at 10 cumulative percent and a second diameter at 90 cumulative percent that is different from the first diameter by 2.1 μm or more and 4.2 μm or less.

The present invention provides a packaging method and a packaging structure for a cascode power electronic device, in which a hetero-multiple chip scale package is used to replace the traditional die bonding and wire bonding packaging method. The cascode power electronic device can reduce the inductance resistance and thermal resistance of the connecting wires and reduce the size of the package; and increase the switching frequency of power density. The chip scale package of the present invention uses more than one gallium nitride semiconductor die, more than one diode, and more than one metal oxide semiconductor transistor. The package structure can use TO-220, quad flat package or other shapes and sizes; the encapsulation process of the traditional epoxy molding compounds can be used in low-power applications; and the encapsulation process of ceramic material can be used in high-power applications.

The present disclosure relates to a package architecture and a method for making the same. The disclosed package architecture includes a package carrier, a first device die and a second device die mounted on the package carrier, and a heat spreader. The first device die includes a first device body with a thickness between 5 μm and 130 μm, a die carrier, and an attachment section between the first device body and the die carrier, while the second device die includes a second device body. The first device body and the second device body are formed of different materials. A top surface of the die carrier of the first device die and a top surface of the second device body of the second device die are substantially coplanar. The heat spreader resides over the top surface of the die carrier and the top surface of the second device body.

A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

A vapor chamber structure includes a thermally conductive shell, a capillary structure layer, and a working fluid. The thermally conductive shell includes a first thermally conductive portion and a second thermally conductive portion. The first thermally conductive portion and the second thermally conductive portion are a thermally conductive plate that is integrally formed, and the thermally conductive shell is formed by folding the thermally conductive plate in half and then sealing the thermally conductive plate. The first thermally conductive portion has at least one first cavity, the second thermally conductive portion has at least one second cavity. At least one sealed chamber is defined between the thermally conductive plate, the first cavity and the second cavity. A pressure in the sealed chamber is lower than a standard atmospheric pressure. The capillary structure layer covers an inner wall of the sealed chamber. The working fluid is filled in the sealed chamber.