A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

A heat dissipation substrate structure having a non-rectangular heat dissipation layer is provided. The heat dissipation substrate structure having the non-rectangular heat dissipation layer includes a heat dissipation substrate and the non-rectangular heat dissipation layer. The non-rectangular heat dissipation layer is disposed on the heat dissipation substrate, and has one or more positioning features located at one corner of a brazing area of the non-rectangular heat dissipation layer, so as to position a component for subsequent brazing. The non-rectangular heat dissipation layer has one or a plurality of heat dissipation pins that extend from one or more sides of the brazing area of the non-rectangular heat dissipation layer.

A semiconductor package includes an interposer, an electronic device having a first side surface and a second side surface opposite to the first side surface, and including a plurality of memory dies stacked in a vertical direction, at least one first through pipe passing through the electronic device in the vertical direction adjacent to the first side surface, and moving a cooling liquid therein, and a plurality of thermal transmission lines extending in a horizontal direction inside the memory die, and extending in parallel from the first through pipe toward the second side surface.

A disclosed semiconductor device includes a package substrate, a first semiconductor die coupled to the package substrate, a package lid attached to the package substrate and covering the semiconductor die, and a thermal interface material located between a top surface of the semiconductor die and an internal surface of the package lid. The semiconductor device may further include a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the first semiconductor die such that the thermal interface material is located within a predetermined volume between the top surface of the first semiconductor die and the internal surface of the package lid during a reflow operation. The package lid may include a metallic material and the dam may include an epoxy material formed as a single continuous structure or may be formed as several disconnected structures.

A cold plate having a copper base plate and a plurality of fins on the copper base plate. The fins are porous and made by 3D printing a copper-silver alloy on the copper base plate. Alternatively, the fins can be 3D printed and then adhered to the copper base plate with a brazing material. The copper base plate is placed on electronics to be cooled, such as a chip package, using a thermal interface material. An optional manifold can be placed on the copper base plate for circulating a coolant across the fins.

A heat spreading element is provided. The heat spreading element includes compressible pyrolytic graphite sheets and rigid pyrolytic graphite sheets interleaved with the compressible pyrolytic graphite sheets.

A surface modification and joint method for an automobile heat dissipation device and an automobile heat dissipation device having a modified surface are provided. The surface modification and joint method includes providing a metal heat dissipation device, forming a sputtered metal layer that is patterned on a surface of the metal heat dissipation device by sputtering to form a modification area of the metal heat dissipation device so as to modify the surface of the metal heat dissipation device, and jointing a surface of the sputtered metal layer to at least one automobile electronic module by sintering, so that the metal heat dissipation device is thermally coupled to the at least one automobile electronic module.

The present disclosure relates to use of 193-nm excimer laser-based lift-off (LLO) of Al.sub.0.26Ga.sub.0.74N/GaN High-electron mobility transistors (HEMTs) with thick (t>10 μm) AlN heat spreading buffer layers grown over sapphire substrates. The use of the thick AlN heat spreading layer resulted in thermal resistance (R.sub.th) of 16 Kmm/W for as-fabricated devices on sapphire, which is lower than the value of ≈25-50 Kmm/W for standard HEMT structures on sapphire without the heat-spreaders. Soldering the LLO devices onto a copper heat sink led to a further reduction of R.sub.th to 8 Kmm/W, a value comparable to published measurements on bulk SiC substrates. The reduction in R.sub.th by LLO and bonding to copper led to significantly reduced self-heating and drain current droop. A drain current density as high as 0.9 A/mm was observed despite a marginal reduction of the carrier mobility (≈1800 to ≈1500 cm.sup.2/Vs). This is the highest drain current density and mobility reported to-date for LLO AlGaN/GaN HEMTs.

A method for manufacturing a patterned surface coating of an automobile heat dissipation device and an automobile heat dissipation device having a patterned surface coating are provided. The method for manufacturing the patterned surface coating of the automobile heat dissipation device includes providing a metal heat dissipation device, and forming a sputtered metal layer that is patterned on an upper surface of the metal heat dissipation device by sputtering, allowing a thickness of the sputtered metal layer to be between 1 μm and 3 μm, and allowing the sputtered metal layer to cover an area less than 90% of an area of the upper surface of the metal heat dissipation device.

Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.