A method of fabricating a semiconductor package structure is provided. The structure is configured to include a base substrate, a die placed on the base substrate, the die including a semiconductor device, a solder bump placed on one surface of the die to exhaust heat generated in the die to an outside; and a solder ball placed on other surface of the die facing the one surface to transmit a signal, which is produced by the semiconductor device of the die, to an external device.

A multi-layer cooling structure comprising a first substrate layer comprising an array of cooling channels, a second substrate layer comprising a nozzle structure that includes one or more nozzles, an outlet, and an outlet manifold, a third substrate layer comprising an inlet manifold and an inlet, and one or more TSVs disposed through the first substrate layer, second substrate layer, and third substrate layer. At least one of the one or more TSVs is metallized. The first substrate layer and the second substrate layer are directly bonded, and the second substrate layer and the third substrate layer are directly bonded.

A package and a method of forming the same are provided. The package includes: a die stack bonded to a carrier, the die stack including a first integrated circuit die, the first integrated circuit die being a farthest integrated circuit die of the die stack from the carrier, a front side of the first integrated circuit die facing the carrier; a die structure bonded to the die stack, the die structure including a second integrated circuit die, a backside of the first integrated circuit die being in physical contact with a backside of the second integrated circuit die, the backside of the first integrated circuit die being opposite the front side of the first integrated circuit die; a heat dissipation structure bonded to the die structure adjacent the die stack; and an encapsulant extending along sidewalls of the die stack and sidewalls of the heat dissipation structure.

A semiconductor device includes a semiconductor chip, a heat sink, a resin package, heat transfer material and multiple spacers. The heat sink absorbs heat of the semiconductor chip. The resin package accommodates the semiconductor chip, and the resin package has a surface at which the heat sink is disposed. The heat transfer material has fluidity, and the heat transfer material is filled between the heat sink and the cooling plate. The spacers are dispersedly arranged in the heat transfer material, and the spacers are in contact with the heat sink and the cooling plate.

A semiconductor packaging device includes a wiring board, a working chip, a heat-dissipating metal lid and a silicon thermal conductivity element. The working chip is mounted on the wiring board, and in-built with an working circuit therein. The silicon thermal conductivity element is thermally coupled to the working chip and the heat-dissipating metal lid, and is electrically isolated from the working circuit and the wiring board.

A semiconductor packaging device includes a wiring board, a working chip, a heat-dissipating metal lid and a silicon thermal conductivity element. The working chip is mounted on the wiring board, and in-built with an working circuit therein. The silicon thermal conductivity element is thermally coupled to the working chip and the heat-dissipating metal lid, and is electrically isolated from the working circuit and the wiring board.

The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a heat transfer layer disposed over a substrate, a channel material layer, a gate structure and source and drain terminals. The channel material layer has a first surface and a second surface opposite to the first surface, and the channel material layer is disposed on the heat transfer layer with the first surface in contact with the heat transfer layer. The gate structure is disposed above the channel material layer. The source and drain terminals are in contact with the channel material layer and located at two opposite sides of the gate structure.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.