An electronic component includes a substrate having a first main surface on one side and a second main surface on the other side, a chip having a first chip main surface on one side and a second chip main surface on the other side, and a plurality of electrodes formed on the first chip main surface and/or the second chip main surface, the chip being arranged on the first main surface of the substrate, a sealing insulation layer that seals the chip on the first main surface of the substrate such that the second main surface of the substrate is exposed, the sealing insulation layer having a sealing main surface that opposes the first main surface of the substrate, and a plurality of external terminals formed to penetrate through the sealing insulation layer so as to be exposed from the sealing main surface of the sealing insulation layer, the external terminals being respectively electrically connected to the plurality of electrodes of the chip.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.

An automotive power package includes a heat sink layer fabricated onto at least one surface of the automotive power package. The heat sink layer includes a material having a thermal conductivity higher than 130 W/m-K and a coefficient of thermal expansion between 5 and 15 ppm/° C.

Thermally conductive, electrically insulating materials and their manufacture on integrated circuit (IC) dies. An IC die may include a substrate with transistors on one side and, on the first and/or a second side, electrically insulating materials enhanced with thermally conductive materials. Such an IC die may be included in a system with a power supply. Such materials may be co-deposited, or interspersed, or interleaved together in a composite material.

A system is provided for interconnecting multiple functional dies on a single substrate, including: (1) multiple global links in the substrate; (2) multiple local links in the substrate; and (3) multiple utility dies on the substrate, wherein each of the utility dies is connected to at least one of the global links, the utility dies are configured to communicate with one another through the global links, each of the utility dies is connected to at least one of the local links and is configured to communicate with at least one of the functional dies through the at least one of the local links. In some embodiments, an antenna is integrated into the substrate.

A semiconductor package including a substrate; a semiconductor stack on the substrate; an underfill between the substrate and the semiconductor stack; an insulating layer conformally covering surfaces of the semiconductor stack and the underfill; a chimney on the semiconductor stack; and a molding member surrounding side surfaces of the chimney, wherein the semiconductor stack has a first upper surface that is a first distance from the substrate and a second upper surface that is a second distance from the substrate, the first distance being greater than the second distance, wherein the chimney includes a thermally conductive filler on the first and second upper surfaces of the semiconductor stack, the thermally conductive filler having a flat upper surface; a thermally conductive spacer on the thermally conductive filler; and a protective layer on the thermally conductive spacer, and wherein an upper surface of the thermally conductive spacer is exposed.

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

A semiconductor structure includes a semiconductor substrate, a porous semiconductor region within the semiconductor substrate, and through-substrate via (TSV) within the porous semiconductor region. The porous semiconductor region causes the semiconductor structure and/or the TSV to withstand thermal and mechanical stresses. Alternatively, the semiconductor structure includes a semiconductor buffer ring within the porous semiconductor region, and the TSV within the semiconductor buffer ring.

An electronics assembly includes a semiconductor device having a first device surface and at least one device conductive layer disposed directly thereon. A cooling structure coupled to the semiconductor device includes a manifold layer, a microchannel layer bonded to the manifold layer, at least one planar side cooling structure, and one or more cooling structure conductive layers. The manifold layer includes a fluid inlet and a fluid outlet and defines a first cooling structure surface. The microchannel layer comprises at least one microchannel fluidly coupled to the fluid inlet and the fluid outlet and defines a second cooling structure surface opposite from the first cooling structure surface. The planar side cooling structure surface is transverse to the first and the second cooling structure surfaces. The cooling structure conductive layers are disposed directly on the first cooling structure surface, the second cooling structure surface, and the planar side cooling structure surface.