H01L23/4012

Semiconductor device having switching element suppressing potential variation
10879782 · 2020-12-29 · ·

The semiconductor device is provided with a plurality of switching elements connected in parallel to each other, and a plurality of recirculation element connected in parallel to the aforementioned plurality of switching elements. An emitter electrode serves as a reference potential of the aforementioned plurality of switching elements and an anode electrode serves as a reference potential of the aforementioned plurality of recirculation elements are electrically connected by the same plate-like member consisting of a conductive material. The aforementioned switching elements and the aforementioned recirculation elements which are connected in parallel on the lowest potential side are constituted so that the distance from the emitter terminal connected to the aforementioned emitter electrode to the aforementioned recirculation element becomes no greater than the distance from the aforementioned emitter terminal.

Power-module assembly with cooling arrangement

A power-module assembly includes a plurality of power modules each including a power stage having a substrate and a transistor-based switching arrangement supported on the substrate. The power modules are arranged in a stack that defines coolant chambers interleaved with the power stages and defines a pair of coolant-supply manifolds disposed on opposing sides of the stack and extending along a length of the stack. For each power module, the substrate defines a network of cooling channels connecting the supply manifolds to a corresponding one of the chambers. The network includes first channels each configured to receive coolant from the pair of coolant-supply manifolds, second channels substantially parallel to the first channels and each opening into the corresponding one of the chambers, and third channels crisscrossing the first and second channels to connect the first and second channels in fluid communication.

Semiconductor packaging structure and process

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

POWER CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF
20200388559 · 2020-12-10 · ·

A power conversion device includes a plurality of semiconductor modules, a plurality of coolers, and a frame. The frame pressurizes and holds a stacked body in which the semiconductor modules and the coolers are alternately stacked. The frame includes a first frame and a second frame that sandwich the stacked body therebetween. The first frame is a plate material bent to surround the stacked body from three directions, and includes a pair of side walls extending in the stacking direction of the stacked body, and an abutting wall extending between the side walls and abutting the stacked body. The abutting wall is bent outward from the frame. Each of the side walls is bent inward from the frame.

Power converter and manufacturing method of the same
10842055 · 2020-11-17 · ·

A power converter may be provided with: a stacking unit including semiconductor modules interposed between adjacent coolers; a capacitor disposed next to the stacking unit; a first bus bar; a second bus bar; and an insulating plate. The insulating plate is interposed between the first bus bar and the second bus bar, and includes cylinder portions. Each of the cylinder portions passes through corresponding one of third holes of the second bus bar, and allows corresponding one of branch portions of the first bus bar and corresponding one of terminals of the semiconductor modules to pass therethrough. An emitting angle of laser beam that bonds each of the terminals and the corresponding one of the branch portions is adjusted such that reflected beam of laser reaches the corresponding one of the cylinder portions. The cylinder portions are colored in a color comprising a wavelength of the laser.

Semiconductor device and power convertor

A semiconductor device includes a first electrode plate, a second electrode plate disposed to oppose the first electrode plate, and a semiconductor chip disposed between the first electrode plate and the second electrode plate. At least one of the first electrode plate and the second electrode plate has a space where a cooling medium circulates.

Chip Package, Method of Forming a Chip Package, Semiconductor Device, Semiconductor Arrangement, Three-Phase-System, Method of Forming a Semiconductor Device, and Method of Forming a Semiconductor Arrangement

A chip package is provided. The chip package includes a semiconductor chip having on a front side a first connecting pad and a second connecting pad, a carrier having a pad contact area and a recess, encapsulation material encapsulating the conductor chip, a first external connection that is free from or extends out of the encapsulation material, an electrically conductive clip, and a contact structure. The semiconductor chip is arranged with its front side facing the carrier with the first connecting pad over the recess and with the second connecting pad contacting the pad contact area. The clip is arranged over a back side of the semiconductor chip covering the semiconductor chip where it extends over the recess. The electrically conductive contact structure electrically conductively connects the first connecting pad with the first external connection.

PRESSING MEMBER

A pressing member is used for pressing semiconductor modules and cooling pipes which are alternately disposed, and includes a plate and an elastic member. The plate includes a contact plate section that faces an end surface of the fixed unit in the fixed direction and contacts with the end surface of the fixed unit, and plate ribs standing in the fixed direction from an end portion of the contact plate section in a width direction of the contact plate section. The elastic member is disposed in a side of the plate opposite to a side of the plate where the fixed unit is disposed, the elastic member pressing the plate towards a fixed unit side in the fixed direction. The contact plate section has an inner plate surface including a concave surface formed at a portion apart from the plate ribs in a contact region.

Method of assembling a switching module
10790644 · 2020-09-29 · ·

A method of assembling a switching module may arrange a first pressing member on a first supporting member, stack a plurality of switches and a plurality of cooling plates on the first pressing member along a vertical direction, arrange a second pressing member and a supporting member on the uppermost cooling plate, support the first supporting member and a second supporting member using a plurality of supporting rods, press the first pressing member using a pressing device to separate between the first pressing member and the first supporting member, and insert a third pressing member between the first pressing member and the first supporting member.

SELF-HEALING PDMS ENCAPSULATION AND REPAIR OF POWER MODULES
20200294883 · 2020-09-17 ·

A power electronics assembly is provided with a self-healing feature. The power electronics assembly may include a semiconductor electronics device and an insulating substrate coupled to the semiconductor electronics device. A base metal structural component may be provided, coupled to the insulating substrate. The assembly may include a frame component cooperating with the base metal structural component and defining an enclosure containing the semiconductor electronics device and the insulating substrate. The assembly further includes a self-healing polymer comprising disulfide bonds. The self-healing polymer is disposed within the enclosure; additional potting material may also be provided as a multi-layered encapsulation. In various aspects, the self-healing polymer may include polydimethylsiloxane based polyurethane (PDMS-PU) modified with disulfide bonds. The frame component may be configured to direct or confine heat to areas of the assembly where ESD may be problematic.