A removable thermal sticker secured to the surface of a cellular phone for extraction of heat from the cellular phone. The thermal sticker is thin and sized to be conveniently carried. The thermal sticker is adhered to the cellular phone at its hot spot for maximum efficiency. An optional feature employs thermal strips that indicate when the electronic device is exceeding a temperature threshold.

The heat sink with condensing fins and phase change material is formed from a thermally conductive housing, an internal chamber, and a body of liquid phase change material. The thermally conductive housing has a first wall and an opposed second wall and forms an internal chamber. The first wall of the thermally conductive housing is adapted to be in direct contact with one or more heat sources. The body of liquid phase change material is disposed within the internal chamber. The second wall of the thermally conductive housing is adapted to form a plurality of condensing fins. The plurality of condensing fins may contain at least one high thermal conductivity rod. In some embodiments, a high thermal conductivity medium, such as gallium, is disposed within the internal chamber in direct contact with the first wall of the thermally conductive housing.

The heat sinks with vibration enhanced heat transfer for non-liquid heat sources are heat sinks formed from a first body of high thermal conductivity material received within a thermally conductive housing such that at least one contact face of the first body of high thermal conductivity material is exposed, forming a direct contact interface with a heat source requiring cooling. The heat source requiring cooling may be any non-liquid heat source, including a processor chip, an integrated circuit chip, a modular circuit package, or the like. The thermally conductive housing may be disposed such that at least one contact face of the thermally conductive housing is in direct contact with the vibrating base. Alternatively, the vibrating base may be attached to a support attached to the heat source. The vibrating base applies oscillating waves to the heat sink, thereby increasing heat transfer between the heat source and the heat sink.

The heat sinks with vibration enhanced heat transfer are heat sinks formed from a first body of high thermal conductivity material. The first body of high thermal conductivity material is received within a thermally conductive housing such that at least one contact face of the first body of high thermal conductivity material is exposed, forming a direct contact interface with a heat source requiring cooling. The heat source requiring cooling may be a liquid heat source, including but not limited to water. The thermally conductive housing is disposed such that at least one contact face of the thermally conductive housing is in direct contact with the vibrating base. The vibrating base applies oscillating waves to the heat sink, thereby increasing heat transfer between the heat source and the heat sink.

A thermal compensation layer includes a metal inverse opal (MIO) layer that includes a plurality of core-shell phase change (PC) particles encapsulated within a metal of the MIO layer. Each of the core-shell PC particles includes a core that includes a PCM having a PC temperature in a range of from 100 C. to 250 C., and a shell that includes a shell material having a melt temperature greater than the PC temperature of the PCM. A power electronics assembly includes a substrate having a thermal compensation layer formed proximate a surface of the substrate, the thermal compensation layer comprising an MIO layer that includes a plurality of core-shell PC particles encapsulated within a metal of the MIO layer. The power electronics assembly further includes an electronic device bonded to the thermal compensation layer at a first surface of the electronic device.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

An apparatus is provided which comprises: a package substrate, an integrated circuit device coupled with contacts on a surface of the package substrate, underfill between the integrated circuit device and the surface of the package substrate, thermal interface material on a surface of the integrated circuit device opposite the package substrate, a heat spreader in contact with the thermal interface material, and a material on a fillet of the underfill, the material adjacent to the thermal interface material. Other embodiments are also disclosed and claimed.

A heat removal system comprising a heat sink, a plurality of fractal-fins each having a predetermined geometry; and a plurality of phase change materials each having a predetermined geometry.

A semiconductor device package structure is provided. The semiconductor device package structure includes a substrate having a cavity, and phase change material within the cavity. In an example, the phase change material has a phase change temperature lower than 120 degree centigrade. A die may be coupled to the substrate. In an example, the semiconductor device package structure includes one or more interconnect structures that are to couple the die to the phase change material within the cavity.