A semiconductor device package structure is provided. The semiconductor device package structure includes a substrate having a cavity, and phase change material within the cavity. In an example, the phase change material has a phase change temperature lower than 120 degree centigrade. A die may be coupled to the substrate. In an example, the semiconductor device package structure includes one or more interconnect structures that are to couple the die to the phase change material within the cavity.

Embodiments herein relate to systems, apparatuses, processing, and techniques related to patterning one or more sides of a thin film capacitor (TFC) sheet, where the TFC sheet has a first side and a second side opposite the first side. The first side and the second side of the TFC sheet are metal and are separated by a dielectric layer, and the patterned TFC sheet is to provide at least one of a capacitor or a routing feature on a first side of a substrate that has the first side and a second side opposite the first side.

A semiconductor package includes a redistribution substrate having first and second surfaces, and an insulating member and a plurality of redistribution layers on different levels in the insulating member and electrically connected together; a plurality of under bump metallurgy (UBM) pads in the insulating member and connected to a redistribution layer, among the plurality of redistribution layers, adjacent to the first surface, the UBM pads having a lower surface exposed to the first surface of the redistribution substrate; a dummy pattern between the UBM pads in the insulating member, the dummy pattern having a lower surface located at a level higher than the lower surface of the UBM pads; and at least one semiconductor chip on the second surface of the redistribution substrate and having a plurality of contact pads electrically connected to a redistribution layer, among the plurality of redistribution layers, adjacent to the second surface.

A semiconductor module includes a substrate, a semiconductor element and a heat sink plate. The substrate is included in a circuit board. The semiconductor element is disposed at the heat sink plate inside the substrate. A fluid is sealed inside the heat sink plate.

A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes a package component with one or more integrated circuits adhered to a package substrate, a hybrid thermal interface material utilizing a combination of polymer based material with high elongation values and metal based material with high thermal conductivity values. The polymer based thermal interface material placed on the edge of the package component contains the metal based thermal interface material in liquid form.

In one aspect, a device may include a housing, at least one processor within the housing, storage accessible to the at least one processor and within the housing, and plural heat absorbers within the housing that may be spherical. Each heat absorber may include an outer shell and inner material. The outer shell may include a shape-memory material. The inner material may include phase-change material different from the shape-memory material. The melting point of the phase-change material may be lower than the melting point of the shape-memory material. The heat absorbers may be juxtaposed with one or more other components of the device to absorb heat from the one or more other components.

The heat sink with condensing fins and phase change material is formed from a thermally conductive housing, an internal chamber, and a body of liquid phase change material. The thermally conductive housing has a first wall and an opposed second wall and forms an internal chamber. The first wall of the thermally conductive housing is adapted to be in direct contact with one or more heat sources. The body of liquid phase change material is disposed within the internal chamber. The second wall of the thermally conductive housing is adapted to form a plurality of condensing fins. The plurality of condensing fins may contain at least one high thermal conductivity rod. In some embodiments, a high thermal conductivity medium, such as gallium, is disposed within the internal chamber in direct contact with the first wall of the thermally conductive housing.

Various circuit board embodiments are disclosed. In one aspect, an apparatus is provided that includes a circuit board and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board.

An example heat-dissipating device with enhanced interfacial properties generally includes a first heat spreader configured to be thermally coupled to a region configured to generate heat, a second heat spreader, an interposer thermally coupled to at least one of the first heat spreader or the second heat spreader, at least one interfacial layer including a graphene material disposed on at least one surface of the interposer, and a phase change material disposed between the at least one interfacial layer and at least one of the first heat spreader or the second heat spreader and thermally coupled to at least one of the first heat spreader or the second heat spreader.