A terminal member connected to a connection target portion includes: a bent portion bent toward the connection target portion; and a tip connection portion provided at a tip part of the bent portion, in which the tip connection portion is connected to the connection target portion via a conductive bonding material.

In some examples, a system comprises a die having multiple electrical connectors extending from a surface of the die and a lead coupled to the multiple electrical connectors. The lead comprises a first conductive member; a first non-solder metal plating stacked on the first conductive member; an electroplated layer stacked on the first non-solder metal plating; a second non-solder metal plating stacked on the electroplated layer; and a second conductive member stacked on the second non-solder metal plating, the second conductive member being thinner than the first conductive member. The system also comprises a molding to at least partially encapsulate the die and the lead.

A lead-frame assembly is disclosed, for a semiconductor die and comprising a die attach pad and a plurality of elongate leads spaced apart therefrom; wherein each elongate lead has a first proximal end portion, a second distal end portion and a middle portion therebetween; wherein the die attach pad and each of the plurality of elongate leads each comprise a coating-free portion, and a coated portion having a coating material thereon; wherein a part of a perimeter of the die attach pad proximal each lead is comprised in the coating-free portion, and wherein the proximal end portion of each elongate lead is comprised in the coating-free portion. Associated package assemblies and methods are also disclosed.

Methods, systems, and apparatuses for a power card for use in a vehicle. The power card includes an N lead frame, a P lead frame, and an O lead frame each having a body portion and a terminal portion. The O lead frame is located between the N lead frame and the P lead frame. The power card includes a first power device located between the N lead frame and the O lead frame, with a first side coupled to the body portion of the N lead frame and a second side coupled to the body portion of the O lead frame. The power card includes a second power device located between the O lead frame and the P lead frame, with a first side coupled to the body portion of the O lead frame and a second side coupled to the body portion of the P lead frame.

A circuit module includes a substrate module including an upper main surface with a normal line extending in a vertical direction, an electronic component on the substrate module, and a bonding adhesive fixing the electronic component to the upper main surface. The electronic component includes a first electrode. The substrate module includes a second electrode on the right of the bonding adhesive. The first electrode is electrically connected to the second electrode through solder. A first recess recessed downward and including a bottom is in the upper main surface. An upper end of the second electrode is above the bottom. The first recess includes a first area on the left of a first electrode and overlapping the second electrode when viewed in the lateral direction. A material of the first recess is identical to a material of the upper main surface.

A half-bridge having power connections and signal connections shaped from a leadframe, the signal connections electrically connected to semiconductor switching elements so that they can be switched by the signal connections, and the power connections are electrically connected to the switching elements in so that they switch an electrical power transmission between the power connections. The switching elements are embedded in a modular layer system including a contact-connection plane and a metallization for contact-connecting the switching elements, the signal connections and the power connections are arranged on a first surface of the substrate. The modular layer system, the signal connections and the power connections are potted with a potting compound, and external sections of the power connections and/or signal connections shaped in the leadframe extend out of the potting compound from a second surface orthogonal to the first surface, the external sections having ends that are perpendicular to the first surface.

In one example, a semiconductor device comprises a substrate and an electronic device on a top side of the substrate, a lead frame on the top side of the substrate over the electronic device, wherein the lead frame comprises a connection bar and a lead, a component mounted to the connection bar and the lead on a top side of the lead frame, and an encapsulant on the top side of the substrate, wherein the encapsulant contacts a side of the electronic device and a side of the component. Other examples and related methods are also disclosed herein.

A component comprising a structural element, a leadframe and a shaped body, in which component the structural element and the leadframe are enclosed at least in regions by the shaped body in lateral directions and the leadframe does not project beyond side faces of the shaped body. The leadframe has at least one first subregion and at least one second subregion which is laterally spaced apart from the first subregion, wherein the structural element is electrically conductively connected to the second subregion by a planar contact structure. Furthermore, the structural element is arranged, in plan view, on the first subregion and projects laterally beyond the first subregion at least in regions, so that the structural element and the first subregion form an anchoring structure at which the structural element and the first subregion are anchored to the shaped body. Further specified is a method for producing such a component.

Disclosed embodiments include an integrated circuit (IC) comprising a silicon wafer, first and second conductive lines on the silicon wafer. There are first, second and third insulation blocks with portions on the first and second conductive lines and the silicon wafer, a metal pillar on the surface of the first conductive line opposite the silicon wafer, and a conductive adhesive block on the surface of the second conductive line opposite the silicon wafer. The IC also has a lead frame having first and second leads, and a capacitor having first and second capacitor terminals in which the first capacitor terminal is connected to the second lead using conductive adhesive, the second capacitor terminal is connected to the second conductive line through the conductive adhesive block, and the first lead is coupled to the first conductive line.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.