Provided is a resin-encapsulated semiconductor device in which heat dissipation characteristic and mounting strength to a substrate are improved. Heat dissipation outer leads connected to inner leads connected to the four corners of a die pad are exposed to the outside of an encapsulating resin to improve the heat dissipation characteristic. The ends of the heat dissipation outer leads are cut in lead frame pressing, and exterior plating films are formed on the entire surfaces of the heat dissipation outer leads including the ends in exterior plating of the resin-encapsulated semiconductor device, permitting easy formation of solder fillet when the semiconductor device is mounted on a substrate.

Semiconductor die assemblies having high efficiency thermal paths and molded underfill material. In one embodiment, a semiconductor die assembly comprises a first die and a plurality of second dies. The first die has a first functionality, a lateral region, and a stacking site. The second dies have a different functionality than the first die, and the second dies are in a die stack including a bottom second die mounted to the stacking site of the first die and a top second die defining a top surface of the die stack. A thermal transfer structure is attached to at least the lateral region of the first die and has a cavity in which the second dies are positioned. An underfill material is in the cavity between the second dies and the thermal transfer structure, and the underfill material covers the top surface of the die stack.

A semiconductor power device has: a die, with a front surface and a rear surface, and with an arrangement of projecting regions on the front surface, which define between them windows arranged within which are contact regions; and a package, which houses the die inside it. A metal frame has a top surface and a bottom surface; the die is carried by the frame on the top surface; an encapsulation coating coats the frame and the die. A first insulation multilayer is arranged above the die and is formed by an upper metal layer, a lower metal layer, and an intermediate insulating layer; the lower metal layer is shaped according to an arrangement of the projecting regions and has contact projections, which extend so as to electrically contact the contact regions, and insulation regions, interposed between the contact projections, in positions corresponding to the projecting regions.

An electric drive module having a motor and an inverter that are disposed in a housing The motor includes a stator, which has a plurality of sets of windings. The inverter has a plurality of power semiconductors, which are mounted into a retaining member, an end plate, which is sealingly coupled to the retaining member, and an inlet port that extends through the end plate. Sets of the semiconductor devices are electrically coupled to corresponding sets of the windings. Power terminals on the semiconductor devices are coupled to a heat sink. Fins on the heat sinks extend into an annular region that is adjacent to axial ends of the windings. At least one of the retaining member and the end plate is sealingly coupled to the housing assembly. The inlet port, the annular region and cooling passages in the stator are coupled in fluid communication.

A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set. The semiconductor device further includes a plurality of semiconductor elements provided on the plurality of circuit patterns in the element region, a plurality of main terminals that each have a first end joined to one of the plurality of circuit patterns in the element region and a second end extending out of the substrate from a first side of the substrate, a plurality of control terminals disposed in a control region that is adjacent to a second side of the substrate opposite the first side, and a sealing member that seals the principal surface and the control region.

A molded package includes an IC chip mounted on a first surface of a lead frame, and a molded resin encapsulating the lead frame together with the IC chip. The molded resin has a second surface-side opening portion that is formed to expose a chip correspondence portion of a second surface of the lead frame corresponding to the IC chip. A filler material is filled in the second surface-side opening portion. The filler material has a thermal conductivity equal to or greater than that of the molded resin and is softer than the molded resin. The chip correspondence portion has a rough surface with fine splits so as to increase a contact area with the filler material, and the filler material is in contact with the external member.

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.

Embodiments include apparatuses, methods, and systems that may include a leadframe of a circuit package to conduct heat generated by an integrated circuit (IC) included in the circuit package, while being a part of an interconnect of the circuit package. In various embodiments, a circuit package may include a package substrate, and an IC attached to the package substrate. A leadframe may be disposed on the IC to conduct heat generated by the IC. In addition, the leadframe may be a part of an interconnect of the circuit package, and the leadframe may be electrically coupled to a component of the IC. Other embodiments may be described and/or claimed.

A dual side cooling power module includes: a lower substrate including a recessed portion on at least one surface thereof, a semiconductor chip formed in the recessed portion, lead frames formed at both ends of the lower substrate, and an upper substrate formed on the semiconductor chip, a portion of the lead frames, and the lower substrate.

According to one aspect of the present invention, there is provided a curable resin composition including at least: a polysiloxane compound having, in a molecule thereof, at least two functional groups selected from the group consisting of silanol groups and alkoxysilyl groups as a component (A-1); and silica whose extract water has a pH of 6.1 or lower at 25° C. as a component (B), wherein the amount of the component (B) relative to the total amount of the components (A-1) and (B) is in a range of 70 to 97 mass %. This curable resin composition is able to, even when formed into various shapes and sizes, prevent foaming during curing and thus is suitable as an encapsulant material for a semiconductor element.