An electronic device, a package structure and an electronic manufacturing method are provided. The electronic device includes a substrate, a first bump, a second bump and a first reflowable material. The first bump is disposed over the substrate, and has a first width. An end portion of the first bump defines a first recess portion. The second bump is disposed over the substrate, and has a second width less than the first width. The first reflowable material is disposed on the first bump and extends in the first recess portion.

A semiconductor package assembly and a manufacturing method are provided. The semiconductor package assembly includes: a base plate having a first surface; a first chip structure located on the base plate and electrically connected to the first surface of the base plate; an intermediary layer having a first interconnection surface; and a molding compound. The first interconnection surface has a first and second interconnection regions. A first solder ball is formed on the first interconnection region. A first pad is formed on the second interconnection region. The intermediary layer is electrically connected to the first surface by means of the first pad. The molding compound seals the first chip structure, the intermediary layer and the first surface. The first solder ball has a surface exposed from the molding compound. There is a preset height between the exposed surface of the first solder ball and the first interconnection surface.

An electronic structure, an electronic package structure and method of manufacturing an electronic device are provided. The electronic structure includes a carrier and a protection layer. The carrier includes a first pad, a second pad and a first dielectric layer. The first pad is at a side of the carrier and configured to bond with a conductive pad. The second pad is at the side of carrier and configured to electrically connect an exterior circuit. The first dielectric layer includes a first portion around the first pad and a second portion around the second pad, wherein a top surface of the first portion and a top surface of the second portion are substantially coplanar. The protection layer is on the second pad and covers the second pad.

Provided are package-on-package (POP)-type semiconductor packages including a lower package having a first size and including a lower package substrate in which a lower semiconductor chip is, an upper redistribution structure on the lower package substrate and the lower semiconductor chip, and alignment marks. The packages may also include an upper package having a second size smaller than the first size and including an upper package substrate and an upper semiconductor chip. The upper package substrate may be mounted on the upper redistribution structure of the lower package and electrically connected to the lower package, and the upper semiconductor chip may be on the upper package substrate. The alignment marks may be used for identifying the upper package, and the alignment marks may be below and near outer boundaries of the upper package on the lower package.

The disclosure provides a semiconductor package substrate made from non-metallic material having a first top surface, a second bottom surface opposite from the first surface, and at least one side surface, the substrate includes at least two pads positioned on the first surface and suitable for receiving an electronic element, an encapsulant material layer covering the first surface, at least two terminals positioned on the second surface and electrically connected to the pads, and a portion of at least one of the two terminals is exposed at the at least one side surface and structured as a wettable flank.

A semiconductor package includes: a first redistribution layer including a first wiring; a die located on the first redistribution layer; and a shielding structure surrounding the die from an upper surface and side surfaces of the die, wherein the shielding structure includes: a shielding wall that is spaced apart from the side surfaces of the die and surrounds the side surfaces of the die; and a shielding cover that is spaced apart from the upper surface of the die and surrounds the upper surface of the die.

A stackable via package includes a substrate having an upper surface and a trace on the upper surface, the trace including a terminal. A solder ball is on the terminal. The solder ball has a solder ball diameter A and a solder ball height D. A via aperture is formed in a package body enclosing the solder ball to expose the solder ball. The via aperture includes a via bottom having a via bottom diameter B and a via bottom height C from the upper surface of the substrate, where A<B and 0=<C<1/2×D. The shape of the via aperture prevents solder deformation of the solder column formed from the solder ball as well as prevents solder bridging between adjacent solder columns.

A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

A semiconductor device includes: a metal block; a semiconductor element fixed to an upper surface of the block with a first joining material; a main terminal fixed to an upper surface of the element with a second joining material; a signal terminal electrically connected to the element; and a mold resin covers the element, the first and second joining materials, a part of the block, of the main and signal terminals. In the element, a current flows in a longitudinal direction. A lower surface of the block is exposed from the resin. The main and the signal terminals are exposed from a side surface of the resin. The main terminal has a first portion in the resin, a second portion continuous with the first portion and bent downward outside the resin, and a third portion continuous with the second portion and substantially parallel to a lower surface of the resin.

A package includes a semiconductor carrier, a first die, a second die, a first encapsulant, a second encapsulant, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The second encapsulant laterally encapsulates the second die. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die and penetrates through the first encapsulant, and a third portion of the electron transmission path is aside the second die and penetrates through the second encapsulant.