A method of making an integrated circuit includes operations to identify reverse signal nets of the circuit layout, determine the parasitic capacitance in conductive lines, and determine how to adjust an integrated circuit layout to reduce the parasitic capacitance of the conductive lines to the reverse signal net. The method further includes an operation to determine whether to move one of the conductive lines in the integrated circuit layout, an operation to determine whether to insert an isolation structure between the conductive lines of the reverse signal net having parasitic capacitance, and operations to adjust the layout by moving a conductive line.

A device may include a substrate, and an interlevel dielectric arranged over the substrate. The interlevel dielectric may include a first interlevel dielectric layer in an interconnect level i, the first interlevel dielectric layer having a first interconnect and a second interconnect therein. A nitride block insulator may be arranged over the first interlevel dielectric layer and over the first interconnect and the second interconnect. An opening may be arranged in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer. A contact plug may be arranged in the opening of the nitride block insulator. The contact plug at least lines the opening and prevents out-diffusion of conductive material from the first interconnect. A thin film of a passive component may be arranged over the nitride block insulator and over the contact plug.

A package on a die having a low resistive substrate, wherein the package comprises an inductor on low-k dielectric and a capacitor on high-k dielectric. The stacked arrangement having different dielectric materials may provide an inductor having a high Q-factor while still having a high capacitance density. In addition, moving the inductor from the die to the package and fabricating the high density capacitor on the package reduces the silicon area required permitting smaller RF/analog blocks on the chip.

A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

An integrated electronic circuit including: a dielectric body delimited by a front surface; A top conductive region of an integrated electronic circuit extend within a dielectric body having a front surface. A passivation structure including a bottom portion and a top portion laterally delimits an opening. The bottom portion extends on the front surface, and the top portion extends on the bottom portion. A field plate includes an internal portion and an external portion. The internal portion is located within the opening and extends on the top portion of the passivation structure. The external portion extends laterally with respect to the top portion of the passivation structure and contacts at a bottom one of: the dielectric body or the bottom portion of the passivation structure. The opening and the external portion are arranged on opposite sides of the top portion of the passivation structure.

A high-frequency amplifier includes: a common-source transistor that has gate fingers, drain fingers, and source fingers, amplifies a signal applied to each of the gate fingers as a signal to be amplified, and outputs an amplified signal from each of the drain fingers; a common-gate transistor that has source fingers connected to the drain fingers of the common-source transistor, drain fingers, and gate fingers, and amplifies the amplified signal output from each of the drain fingers of the common-source transistor; a gate bus bar connected to the gate fingers of the common-gate transistor; and capacitors each having a first end connected to the gate bus bar and a second end grounded: wherein the capacitors are arranged at respective positions where impedances obtained by looking toward the respective capacitors from the respective gate fingers of the common-gate transistor are equal to each other.

A semiconductor package structure includes a first electronic component, a conductive element and a first redistribution structure. The first electronic component has a first surface and a second surface opposite to the first surface, and includes a first conductive via. The first conductive via has a first surface exposed from the first surface of the first electronic component. The conductive element is disposed adjacent to the first electronic component. The conductive element has a first surface substantially coplanar with the first surface of the first conductive via of the first electronic component. The first redistribution structure is configured to electrically connect the first conductive via of the first electronic component and the conductive element.

A metal-insulator-metal capacitor includes a first electrode disposed in a first region of an upper surface of a substrate, a second electrode covering the first electrode and extending to a second region surrounding an outer periphery of the first region, a third electrode covering the second electrode and extending to a third region surrounding an outer periphery of the second region, a first dielectric layer disposed between the first electrode and the second electrode to cover an upper surface and a side surface of the first electrode and extending to the second region, and a second dielectric layer disposed between the second electrode and the third electrode to cover an upper surface and a side surface of the second electrode and extending to the third region and in contact with the first dielectric layer.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Deep trench capacitors (DTCs) in an inter-layer medium (ILM) on an interconnect layer of an integrated circuit (IC) die is disclosed. A method of fabricating an IC die comprising DTCs in the ILM is also disclosed. The DTCs are disposed on an IC, in an ILM, to minimize the lengths of the power and ground traces coupling the DTCs to circuits in a semiconductor layer. The DTCs and the semiconductor layer are on opposite sides of the metal layer(s) used to interconnect the circuits, so the locations of the DTCs in the ILM can be independent of circuit layout and interconnect routing. IC dies with DTCs disposed in the ILM can significantly reduce voltage droop and spikes in IC dies in an IC stack. In one example, DTCs are also located in trenches in the substrate of the IC die.