A semiconductor device 1 includes a base body 3 that includes a p type substrate 4 and an n type semiconductor layer 5 formed on the p type substrate 4 and includes an element region 2 having a transistor 40 with the n type semiconductor layer as a drain, a p type element isolation region 7 that is formed in a surface layer portion of the base body such as to demarcate the element region, and a conductive wiring 25 that is disposed on a peripheral edge portion of the element region and is electrically connected to the n type semiconductor layer. The transistor includes an n.sup.+ type drain contact region 14 that is formed in a surface layer portion of the n type semiconductor layer in the peripheral edge portion of the element region. The conductive wiring is disposed such as to cover at least a portion of an element termination region 30 between the n.sup.+ type drain contact region and the p type element isolation region.

An exemplary device includes a dielectric layer and a transmission line structure disposed in the dielectric layer. The transmission line structure includes a first metal line disposed between a second metal line and a third metal line. Dielectric islands are disposed in a first region and a second region of the dielectric layer. The first region of the dielectric layer is between the first metal line and the second metal line. The second region of the dielectric layer is between the first metal line and the third metal line. A dielectric constant of the dielectric islands is greater than a dielectric constant of the dielectric layer. The dielectric islands may be doped sections of the dielectric layer. In some embodiments, the dielectric islands in the first region are aligned with the dielectric islands in the second region along a direction perpendicular to a lengthwise direction of the first metal line.

The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.

A device includes a first conductive feature in an insulating layer; a dielectric layer over the first conductive feature; a second conductive feature in the dielectric layer, wherein the second conductive feature is over and physically contacting the first conductive feature; an air spacer encircling the second conductive feature, wherein sidewalls of the second conductive feature are exposed to the air spacer; a metal cap covering the second conductive feature and extending over the air spacer, wherein the air spacer is sealed by a bottom surface of the metal cap; a first etch stop layer on the dielectric layer, wherein a sidewall of the first etch stop layer physically contacts a sidewall of the metal cap; and a second etch stop layer extending on a top surface of the metal cap and a top surface of the first etch stop layer.

A semiconductor device includes a substrate, a first conductive feature over a portion of the substrate, and an etch stop layer over the substrate and the first conductive feature. The etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer. The semiconductor device further includes a dielectric layer over the etch stop layer, and a second conductive feature in the dielectric layer. The second conductive feature penetrates the etch stop layer and electrically connects to the first conductive feature.

A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a stop layer between the dielectric layer and the substrate, wherein the stop layer contacts the substrate directly and the dielectric layer covers the top surface of the stop layer; forming an opening in the dielectric layer, wherein the dielectric layer comprises a damaged layer adjacent to the opening; forming a dielectric protective layer in the opening; forming a metal layer in the opening; removing the damaged layer and the dielectric protective layer to form a void, wherein the void exposes a top surface of the substrate; and forming a cap layer on and covering the dielectric layer, the void, and the metal layer.

A metal capacitor provided includes a first metal layer and a second metal layer disposed above a substrate. The first metal layer includes a first electrode sheet and a second electrode sheet, and the second metal layer includes a third electrode sheet and a fourth electrode sheet. The first electrode sheet and the second electrode sheet collectively form a first coplanar capacitor. The third electrode sheet and the fourth electrode sheet collectively form a second coplanar capacitor. At least a portion of the fourth electrode sheet is arranged above the first electrode sheet, and the first electrode sheet and the fourth electrode sheet collectively form a first vertical capacitor. At least a portion of the third electrode sheet is arranged above the second electrode sheet, and the second electrode sheet and the third electrode sheet collectively form a second vertical capacitor.

A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 μm. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

A package structure, a packaging method and a semiconductor device are provided. The method includes: providing a semiconductor functional structure, an interconnecting layer disposed on a surface of the semiconductor functional structure; forming an isolation layer exposing part of the interconnecting layer, the exposed part of the interconnecting layer acting as a first pad, and the first pad used for performing a first type test; after completing the first type test, forming a redistribution layer on the first pad and the isolation layer, the redistribution layer and the interconnecting layer electrically connected; and forming a first insulating layer exposing parts of the redistribution layer, the exposed parts of the redistribution layer acting as a second pad and a third pad, the second pad used for performing a second type test, and the third pad used for executing a functional interaction corresponding to contents of the second type test.