The present disclosure provides a semiconductor device with an interconnect part and a method for forming the semiconductor device. The semiconductor device includes a first source/drain structure disposed over a carrier substrate, and a backside contact disposed over and electrically connected to the first source/drain structure. The semiconductor device also includes an interconnect part disposed over the backside contact. The interconnect part includes a lower redistribution layer electrically connected to the backside contact, and an upper redistribution layer disposed over the lower redistribution layer. The interconnect part also includes an interconnect frame disposed between and electrically connected to the lower redistribution layer and the upper redistribution layer. The interconnect part further includes a passivation structure surrounding the interconnect frame.

A semiconductor package includes a first semiconductor chip, a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip, and an insulating adhesive layer between the first semiconductor chip, and each of the plurality of second semiconductor chips, each of the plurality second conductor chips, and the insulating adhesive layer including an adhesive fillet protruding from between at least the first semiconductor chip and each of the plurality of second semiconductor chips, wherein a grooving recess is defined by the first semiconductor chip, the plurality of second semiconductor chips, and the insulating adhesive layer, the grooving recess including a first recess and a second recess adjacent to the first recess, an uppermost surface of the adhesive fillet and the first semiconductor chip defines the first recess, and an uppermost surface of the first semiconductor chip to a surface inside the first semiconductor chip defines the second recess.

A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.

A microelectronic package may include stacked microelectronic dice, wherein a first microelectronic die is attached to a microelectronic substrate, and a second microelectronic die is stacked over at least a portion of the first microelectronic die, wherein the microelectronic substrate includes a plurality of pillars extending therefrom, wherein the second microelectronic die includes a plurality of pillars extending therefrom in a mirror-image configuration to the plurality of microelectronic substrate pillars, and wherein the second microelectronic die pillars are attached to microelectronic substrate pillars with an attachment material.

A semiconductor device includes a semiconductor element having a surface on which a first electrode and a second electrode are disposed, a conductor plate having a surface facing the surface of the semiconductor element and electrically connected to the first electrode, an insulating layer disposed on the surface of the conductor plate and covers a part of the surface of the conductor plate, and a conductor circuit pattern disposed on the insulating layer. The conductor circuit pattern has at least one conductor line electrically connected to the semiconductor element. The at least one conductor line includes a conductor line electrically connected to the second electrode.

A display is created using “smart pixels.” A smart pixel is a pixel of a display that integrates the pixel pipeline as part of the pixel, rather than using separate integrated circuits. A smart pixel may be based on an integrated stack that includes light emitting elements, an external data contact for receiving digital data for that pixel, and also the pixel pipeline from the digital data to the light emitting elements.

A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, the semiconductor chip including a logic chip and a memory stack structure on the logic chip, a connector and a connector terminal below the package substrate, a molding layer that covers the semiconductor chip, the molding layer having a recess region on a top surface of the molding layer, a housing that covers the molding layer, and an air gap on the semiconductor chip, the air gap being defined by the housing and the recess region of the molding layer, and the molding layer separating the air gap from the memory stack structure of the semiconductor chip.

According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of recess portions on a first surface of a support. Each recess portion is between protrusion portions on the first surface. A stacked body is then placed into each of the recess portions. The stacked body is a plurality of semiconductor chips stacked on each other or the like. The recess portions are filled with a resin layer. The resin layer covers the stacked bodies inside the recess portions. A protrusion portion of the support is irradiated with a laser beam to form a modified portion in the protrusion portion. The support is divided along the protrusion portions into separate pieces.

A process for batch fabrication of circuit components is disclosed via simultaneously packaging multiple circuit component dice in a matrix. Each die has electrodes on its tops and bottom surfaces to be electrically connected to a corresponding electrical terminal of the circuit component it's packaged in. For each circuit component in the matrix, the process forms preparative electrical terminals on a copper substrate. Component dice are pick-and-placed onto the copper substrate with their bottom electrodes landing on corresponding preparative electrical terminal. Horizontal conductor plates are then placed horizontally on top of the circuit component dice, with bottom surface at one end of each plate landing on the dice's top electrode. An opening is formed at the opposite end and has vertical conductive surfaces. A vertical conductor block is placed into the opening and lands on the preparative electrical terminal, and the opening's vertical conductive surfaces facing the top end side surface of the vertical block. A thermal reflow then simultaneously melts pre-applied soldering material so that each circuit component die and its vertical conductor block are soldered to the copper substrate below and its horizontal conductor plate above.

A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.