A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A semiconductor package comprising a substrate, at least one semiconductor die disposed on the substrate, at least one electrical connector connected with the semiconductor die, an encapsulant covering the substrate, the at least one semiconductor die, and at least partially the electrical connector, the encapsulant comprising a recess formed into a main surface of the encapsulant, wherein the at least one electrical connector is exposed within the recess.

A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.

This semiconductor device includes: a bed including a first upper surface having a plurality of first grooves and a first lower surface; a first bonding material provided on the first upper surface and in contact with the first grooves; a semiconductor chip including a second upper surface having a first electrode and a second electrode, and a second lower surface, the semiconductor chip being provided on the first bonding material and having the second lower surface connected to the first bonding material; a second bonding material provided on the first electrode and connected to the first electrode; and a first connector having a first end having a plurality of second grooves and connected to the second bonding material, and a second end.

A semiconductor device includes an insulating substrate, a first and a second obverse-surface metal layers disposed on an obverse surface of the insulating substrate, a first and a second reverse-surface metal layers disposed on a reverse surface of the insulating substrate, a first conductive layer and a first semiconductor element disposed on the first obverse-surface metal layer, and a second conductive layer and a second semiconductor element disposed on the second obverse-surface metal layer. Each of the first conductive layer and the second conductive layer has an anisotropic coefficient of linear expansion and is arranged such that the direction in which the coefficient of linear expansion is relatively large is along a predetermined direction perpendicular to the thickness direction of the insulating substrate. The first and second reverse-surface metal layers are smaller than the first and second obverse-surface metal layers in dimension in the predetermined direction.

Disclosed are a micro LED group substrate provided with a plurality of micro LEDs, a method of manufacturing the same, a micro LED display panel, and a method of manufacturing the same. More particularly, disclosed are a micro LED group substrate provided with a plurality of micro LEDs, a method of manufacturing the same, a micro LED display panel, and a method of manufacturing the same, wherein the need for a micro LED replacement process is eliminated.

A gang clip includes a plurality of clips formed from a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a length and a bend angle sufficient to electrically contact a lead terminal of the leadframe to be used to form a device. Adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane. The first tie bar extends to a saw street region located between adjacent ones of the clips. A second tie bar attached to the first tie bar is positioned in the saw street region.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.