First, second, and third integrated devices each include one or more interconnecting structure. Each interconnecting structure includes (i) one or more interconnecting nodules extending from an edge surface of the device, (ii) one or more interconnect voids formed in an edge surface of the device, or (iii) both (i) and (ii). The one or more interconnecting structures on each of the first and second device is mated with the one or more interconnecting structures on the second device. The first integrated device includes a signal output, the third integrated device includes a signal input; and the second integrated device includes a conductor for conducting a signal from the signal output to the signal input.

LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

Semiconductor assemblies using edge stacking and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise stacked semiconductor packages including a base substrate having a base surface, a side substrate having a side surface orthogonal to the base surface, and a die stack disposed over the base surface and having an outermost die with an outermost surface orthogonal to the side surface. The side substrate can be electrically coupled to the die stack via a plurality of interconnects extending from the side surface of the side substrate to the first surface of the first substrate or the third surface of the outermost die. The semiconductor packages can further comprise a conductive material at an outer surface of the side substrate, thereby allowing the semiconductor packages to be electrically coupled to neighboring semiconductor packages via the conductive material.

The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Chip scale package such as a chip scale package having a chip integrated therein to provide an integrated chip scale package.

Chip scale package such as a chip scale package having a chip integrated therein to provide an integrated chip scale package.

Semiconductor assemblies and packages using edge stacking and associated systems and methods are disclosed herein. A semiconductor package may include (1) a base substrate having a base surface, (2) one or more dies attached over the base surface, and (3) a mold material encapsulating the base substrate and the one or more dies. The package may further include connectors on a side surface thereof, wherein the connectors are electrically coupled to the base substrate and/or the one or more dies. The connectors may be further configured to electrically couple the package to one or more neighboring semiconductor packages and/or electrical circuits.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A conductive micro pin includes a body having a first end surface, a second end surface, a first side surface connecting the first end surface and the second end surface, and a first corner between the first end surface and the first side surface, in which the first side surface is substantially flat, and the first corner is substantially rounded.