H01L25/042

SUPERLATTICE PHOTO DETECTOR
20210408306 · 2021-12-30 ·

A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes. A packaging structure includes an opening that allows light to enter an exposed first portion of the top surface of the fourth semiconductor layer.

Multi-junction solar cell

According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p.sup.+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n.sup.+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.

PROXIMITY SENSOR
20220189912 · 2022-06-16 ·

A method of manufacturing a sensor device includes obtaining a semiconductor die structure comprising a transmitter and a receiver. Then, a first sacrificial stud is affixed to the transmitter and a second sacrificial stud is affixed to the receiver. The semiconductor die is affixed to a lead frame, and pads on the semiconductor die structure are wirebonded to the lead frame. The lead frame, the semiconductor die structure, and the wirebonds are encapsulated in a molding compound, while the tops of the first and second sacrificial studs are left exposed. The first and second sacrificial studs prevent the molding compound from encapsulating the transmitter and the receiver, and are removed to expose the transmitter in a first cavity and the receiver in a second cavity. In some examples, the semiconductor die structure includes a first semiconductor die comprising the transmitter and a second semiconductor die comprising the receiver.

METHOD FOR PRODUCING A COMPONENT, AND OPTOELECTRONIC COMPONENT
20230275194 · 2023-08-31 ·

A method for manufacturing a component is disclosed. In an embodiment a method for producing a component includes providing a connection carrier and forming a housing body on at least a part of the connection carrier by a 3D printing method, wherein forming the housing body includes applying at least one layer of a liquid potting compound, selectively curing the at least one layer of the liquid potting compound and removing residues of the liquid potting compound.

Semiconductor structure, semiconductor package and method of fabricating the same

A semiconductor structure includes an insulating encapsulant, a semiconductor element, a redistribution layer and an insulating layer. The semiconductor element is embedded in the insulating encapsulant. The redistribution layer is disposed over the insulating encapsulant and electrically connected to the semiconductor element. The insulating layer is disposed in between the insulating encapsulant and the redistribution layer, wherein an uneven interface exists between the insulating layer and the insulating encapsulant, and a planar interface exists between the insulating layer and the redistribution layer.

VISUALLY UNDISTORTED THIN FILM ELECTRONIC DEVICES

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

VISUALLY UNDISTORTED THIN FILM ELECTRONIC DEVICES

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

COPACKGING PHOTODETECTOR AND READOUT CIRCUIT FOR IMPROVED LIDAR DETECTION

Embodiments of the disclosure provide an optical sensing system and an optical sensing method thereof. The optical sensing system comprises a light source configured to emit an optical signal into an environment surrounding the optical sensing system. The optical sensing system further comprises a photodetector configured to receive the optical signal reflected from the environment of the optical sensing system, and convert the optical signal to an electrical signal, where the photodetector is disposed in a package. The optical sensing system additionally comprises a readout circuit configured to generate a readout signal based on the electrical signal received from the photodetector, where the readout circuit is disposed in the same package as the photodetector and connected to the photodetector through routings in the package.

RECEIVING DEVICE AND LASER RADAR INCLUDING THE SAME
20220120870 · 2022-04-21 · ·

A receiver for a laser radar, including: a printed circuit board (PCB) substrate, where the PCB substrate includes a first side and a second side; a photoelectric sensor array, including a plurality of photoelectric sensors, where the photoelectric sensor array is disposed on the first side of the PCB substrate; and a readout chip, where the readout chip is disposed on the second side of the PCB substrate, coupled to the photoelectric sensor array, and configured to receive and read an output of a photoelectric sensor in the photoelectric sensor array.

Optical systems fabricated by printing-based assembly

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.