A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

Electronic power modules are disclosed. In one example, an electronic power module includes a first aluminum substrate, a second aluminum substrate, and a third aluminum substrate arranged in a common plane. The electronic power module includes first gap separating the first aluminum substrate from the second aluminum substrate. The electronic power module includes a second gap separating the second aluminum substrate from the third aluminum substrate. The electronic power module includes a first semiconductor switching component electrically coupled to the first aluminum substrate and the second aluminum substrate. The electronic power module includes a second semiconductor switching component electrically coupled to the second aluminum substrate and the third aluminum substrate.

A package structure is provided. The package structure includes a semiconductor die and a molding compound layer surrounding the semiconductor die. The package structure also includes a conductive bump over the molding compound layer and a first polymer-containing layer surrounding and in contact with the conductive bump. The package structure further includes a second polymer-containing layer disposed over the first polymer-containing layer. A bottom surface of the conductive bump is below a bottom surface of the second polymer-containing layer.

Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

A battery disconnect unit including a housing, an electronic relay module installed on a charge/discharge line of a battery within the housing and including electronic switch devices capable of a switching operation of selectively blocking the flow of a current in the charge/discharge line, a heat dissipation cover provided with a structure surrounding at least a portion of the electronic relay module and formed of a material capable of heat exchange with the electronic relay module, and a cooling plate disposed in contact with the heat dissipation cover and provided to allow a refrigerant to flow in the cooling plate.

An embedded multi-die interconnect bridge apparatus and method includes photolithographically formed interconnects coupled to laser-drilled interconnects. Several structures in the embedded multi-die interconnect bridge apparatus exhibit characteristic planarization during fabrication and assembly.

A semiconductor module internally includes semiconductor elements and multilayer substrates on which the semiconductor elements are arranged. The semiconductor module further includes, in a case, fastening portions for fastening a cooler such as conductive radiating fins or water-cooling jackets, for example. In the semiconductor module, side faces of heat radiating plates formed on the rear surface sides of the multilayer substrates are electrically connected to the fastening portions in the case by conductive connectors.

A circuit assembly that includes a plurality of FETs that include source terminals and gate terminals. The circuit assembly includes a substrate portion to which the source terminals and the gate terminals are connected, and through-holes that are formed in the substrate portion for each FET and pass through the substrate portion in the thickness direction thereof.

A semiconductor package includes a die pad, a die, a first lead, a plurality of second leads, and a mold material. The die is electrically coupled to the die pad. The first lead is electrically coupled to the die. The plurality of second leads are electrically coupled to the die. The plurality of second leads are adjacent to the first lead. The mold material encapsulates at least a portion of the die pad, the die, the first lead, and the plurality of second leads. Each of the plurality of second leads extends a farther distance from the mold material than the first lead.

An integrated circuit packaging structure and method are provided, the integrated circuit packaging structure includes: a substrate, the substrate being provided with a circuit layer and fine wiring; a chip, the chip being provided with a fine pin and a chip pin; the substrate is provided with at least two of said chips, a chip pin of at least one of said chips being electrically connected to the circuit layer; an insulation patch, the fine wiring being provided on the insulation patch, while the fine pin of the chip is electrically connected to the fine wiring, at least two of said chips being directly electrically connected by means of the fine wiring.